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Carrier transport in quantum dot structures
Proceedings of LFNM 2002. 4th International Workshop on Laser and Fiber-Optical Networks Modeling (IEEE Cat. No.02EX549), 2003In the strict sense, the carrier capture or escape processes in QWs are consequences. The prime cause of these phenomena, as well as the reason of finite conductivity of solids existence, is the. carrier scattering on various deviation of the crystal lattice potential from an ideal periodic lattice potential.
A.V. Shulika, V.V. Lysak
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Electronic structure of semiconductor quantum dots
Physica B: Condensed Matter, 1995Abstract The single particle electronic level structure of semiconductor quantum dots (QDs) with a zinc-blende structure, and with size smaller than the bulk exciton Bohr radius, is discussed. Using an empirical tight-binding theory, the energy levels and wave functions of GaAs crystallites containing upto ≈4000 atoms are obtained. The tight-binding (
Lavanya M. Ramaniah, Selvakumar V. Nair
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Creation and Structure of Quantum Dots
1998Unlike quantum wells, where the motion of carriers is restricted to a plane through the crystallization of thin epitaxial layers [64], the creation of quantum wires or dots, which confine the carriers to a space with at least two of three dimensions limited to the range of the de Broglie wavelength, requires far more advanced technology.
Lucjan Jacak +2 more
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The Atomic Structure of Quantum Dots
2008In this chapter, the atomic structure of both uncapped and buried quantum dots is described as derived from scanning tunneling microscopy in both top-view and cross-sectional geometry. Important conclusions are drawn also on the growth processes during quantum dot formation as well as during overgrowth.
Mario Dähne, Holger Eisele, Karl Jacobi
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Quantum Dot Detectors with Plasmonic Structures
2015Abstract : The goal of this project was to investigate the design, fabrication, and characterization, of multispectral quantum dots-in-a-double well (DDWELL) infrared detectors and investigate the integration of a Surface Plasmon (SP) assisted resonant cavity with the infrared detectors.
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Structural properties of GaN quantum dots
2006The strain state and the deformation profile of GaN quantum dots embedded in AlN have been measured by high resolution electron microscopy, medium energy ion scattering and grazing incidence X-ray diffraction. The results are compared with theoretical calculations, allowing one to conclude that GaN quantum dots experience a non biaxial strain which ...
B Daudin +13 more
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Structural Characterization of Quantum Dots
2007R OLIVER, N VANDERLAAK, F ROSS
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