Results 41 to 50 of about 25,543 (202)

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa   +3 more
wiley   +1 more source

Proposal for a Nanomechanical Qubit

open access: yesPhysical Review X, 2021
Mechanical oscillators have been demonstrated with very high quality factors over a wide range of frequencies. They also couple to a wide variety of fields and forces, making them ideal as sensors.
F. Pistolesi   +2 more
doaj   +1 more source

Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework

open access: yesAdvanced Functional Materials, EarlyView.
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu   +13 more
wiley   +1 more source

THE SPIN-ORBIT INTERACTIONS OF ELECTRONS IN QUANTUM DOT

open access: yesВестник. Серия физическая, 2008
The alternative method is suggested for taking into account the influence of each layer to explain the mechanism of blocking electrons in a quantum dot .
M. Dineykhan   +3 more
doaj  

An Operation Guide of Si-MOS Quantum Dots for Spin Qubits

open access: yesNanomaterials, 2021
In the last 20 years, silicon quantum dots have received considerable attention from academic and industrial communities for research on readout, manipulation, storage, near-neighbor and long-range coupling of spin qubits. In this paper, we introduce how
Rui-Zi Hu   +11 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Strain‐Programmable Luminescent Adhesive Patch With Tartrazine‐Mediated Optical Skin Clearing for Photochemical Tissue Bonding

open access: yesAdvanced Functional Materials, EarlyView.
We propose a suture‐complementary approach that integrates optical skin clearing with a strain‐programmable luminescent adhesive patch. Hyaluronic acid promotes transdermal delivery of tartrazine to improve optical clearing and stabilizes its interaction with a photosensitizer. Optical clearing increases the penetration depth of visible light into skin,
Seong‐Jong Kim   +6 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Quantum transport through a quantum dot structure side coupled with many quantum-dot and Majorana-bound-state pairs

open access: yesAIP Advances, 2016
We theoretically investigate the electron transport properties of a wheel-like quantum dot (QD) structure with a central QD side coupled with many pairs of QD and Majorana bound states (MBSs) by using the nonequilibrium Green’s function method.
Z. T. Jiang, S. Li
doaj   +1 more source

Four-wave mixing in quantum dot SOAs: Theory of carrier heating

open access: yesResults in Physics, 2017
Carrier heating (CH) theory in a four-wave mixing quantum dot structure has been investigated. The impact of wetting layer (WL) carrier density, CH time constant, effective intraband relaxation time have been examined.
Ahmed H. Flayyih   +2 more
doaj   +1 more source

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