Results 201 to 210 of about 25,119 (260)

Dual Randomness From Spatial and Temporal Variations in Stochastic Zinc Gallate Nanoclusters for PUF and TRNG Co‐Driven Image Generation

open access: yesAdvanced Science, EarlyView.
A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang   +6 more
wiley   +1 more source

Unitary fault-tolerant encoding of Pauli states in surface codes. [PDF]

open access: yesnpj Quantum Inf
Colmenarez L   +4 more
europepmc   +1 more source

Cr1/4NbSe2‐Single Crystal Growth and Evolution of Antiferromagnetic Correlated States

open access: yesAdvanced Science, EarlyView.
High‐quality single crystals Cr1/4NbSe2 were synthesized and comprehensively characterized for the first time. Advanced structural, electronic, and magnetic measurements uncover a correlated antiferromagnetic state, resolving longstanding inconsistencies regarding magnetic behavior derived from earlier polycrystal studies.
Nour Abdelrahman   +16 more
wiley   +1 more source

Entanglement-induced resilience of quantum dynamics. [PDF]

open access: yesSci Adv
Feng T   +6 more
europepmc   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Array‐Level Characterization of Cryogenic RRAM

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu   +7 more
wiley   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

open access: yesAdvanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang   +6 more
wiley   +1 more source

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