Results 211 to 220 of about 2,313,857 (309)

Enhancing Device Performance with High Electron Mobility GeSn Materials

Advanced Electronic Materials, EarlyView.
Vertical gate‐all‐around nanowire n‐FETs based on GeSn‐alloys with Sn‐contents of 8% and 11% are presented. A great improvement in Ion, gm, and SS is found with increased Sn‐content. A fivefold increase in on‐current is observed for 11%‐GeSn compared to Ge, underlining the potential of GeSn for nanoelectronics applications.
Yannik Junk, Omar Concepción, Marvin Frauenrath, Jingxuan Sun, Jin Hee Bae, Florian Bärwolf, Andreas Mai, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing‐Tai Zhao   +10 more
wiley   +1 more source

Optimal low-depth quantum signal-processing phase estimation. [PDF]

Nat Commun
Dong Y, Gross JA, Niu MY.
europepmc   +1 more source

Franson-type experiment realizes two-qubit quantum logic gate

, 2001
Kaoru Sanaka, Karin Kawahara, Takahiro Kuga   +2 more
openalex   +2 more sources

A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon [PDF]

, 2002
Seiya Kasai, Hiroshi Hasegawa
openalex   +1 more source

ZnO Nanowire Cold Cathode Hemispherical X‐Ray Sources

Advanced Electronic Materials, EarlyView.
Copper (Cu)‐doped zinc oxide (ZnO) nanowires grown on brass substrates are proposed to achieve cold cathode hemispherical X‐ray sources. Strain‐driven solid–liquid growth mechanism is investigated to optimize the field emission of ZnO nanowires with a maximum current of 12.54 mA.
Zhipeng Zhang, Yunyao Zhang, Guofu Zhang, Runze Zhan, Shaozhi Deng, Ningsheng Xu, Jun Chen   +6 more
wiley   +1 more source

Unconditional advantage of noisy qudit quantum circuits over biased threshold circuits in constant depth. [PDF]

Nat Commun
de Oliveira M, Subramanian S, Mendes L, Hsieh MH.   +3 more
europepmc   +1 more source

Exact gate sequences for universal quantum computation using theXYinteraction alone [PDF]

, 2002
Julia Kempe, K. Birgitta Whaley
openalex   +1 more source

Toward Enhanced Biomimetic Artificial Visual Systems Based on Organic Heterojunction Optoelectronic Synaptic Transistors

Advanced Electronic Materials, EarlyView.
An optoelectronic synaptic transistor based on core‐multi‐shell quantum dots and Pentacene achieves a recognition capability under different light intensities that closely resembles that of the human eye. Under optimal light intensity, the recognition accuracy for the MNIST dataset can reach 91.52%.
Haonan Wang, Wandi Chen, Wenjuan Su, Zhenyou Zou, Shuchen Weng, Xiongtu Zhou, Chaoxing Wu, Tailiang Guo, Yongai Zhang   +8 more
wiley   +1 more source

A quantum random access memory (QRAM) using a polynomial encoding of binary strings. [PDF]

Sci Rep
Mukhopadhyay P.
europepmc   +1 more source

Uniform Finite Generation of Compact Lie Groups and universal quantum gates

, 2001
Domenico D’Alessandro
openalex   +2 more sources