Results 251 to 260 of about 2,313,857 (309)

Entangling Schrödinger's cat states by bridging discrete- and continuous-variable encoding. [PDF]

Nat Commun
Hoshi D, Nagase T, Kwon S, Iyama D, Kamiya T, Fujii S, Mukai H, Ahmed S, Kockum AF, Watabe S, Yoshihara F, Tsai JS.   +11 more
europepmc   +1 more source

Solution‐Processed Bismuth Oxide Iodide/Organic‐Semiconductor Heterojunction for UV–vis‐NIR Photoresponsive Electronics

Advanced Electronic Materials, EarlyView.
A phototransistor with high detectivity and long‐term stability under ambient conditions is realized by a layered heterojunction of solution‐processed BiOI and the organic semiconductor DPPDTT. It exhibits a strong photoresponse across the UV to NIR spectrum with a high Ilight/Idark ratio and neuromorphic behavior.
Preetam Dacha, Vaidehi Lapalikar, Anju Kumari Rohitlal, Mike Hambsch, Michael Ruck, Stefan C. B. Mannsfeld   +5 more
wiley   +1 more source

High-rate quantum LDPC codes for long-range-connected neutral atom registers. [PDF]

Nat Commun
Pecorari L, Jandura S, Brennen GK, Pupillo G.   +3 more
europepmc   +1 more source

A Large Area Hybrid Phototransistor Platform with Large Detectivity and Fast Response to NIR Light

Advanced Electronic Materials, EarlyView.
A geometrically engineered tri‐channel architecture with a 4‐mm2 large sensing area is implemented in a hybrid multilayer phototransistor. The side channels electrically coupled to the 4 mm2 large central area enable efficient and fast detection of small perturbations of the charge density at the sensing surface, produced by a near‐infrared ...
Federico Prescimone, Wejdan S. AlGhamdi, Giulia Baroni, Marco Natali, Aiman Fakieh, Hendrik Faber, Margherita Bolognesi, Thomas D. Anthopoulos, Stefano Toffanin   +8 more
wiley   +1 more source

Efficient and practical Hamiltonian simulation from time-dependent product formulas. [PDF]

Nat Commun
Bosse JL, Childs AM, Derby C, Gambetta FM, Montanaro A, Santos RA.   +5 more
europepmc   +1 more source

Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability

Advanced Electronic Materials, EarlyView.
Coplanar DG a‐IGZTO/a‐IZO multi‐channel TFT is proposed for the first time to achieve large drain current, high mobility, and low off‐state current for large‐area AMOLED displays. TCAD simulation verifies the presence of 2D electron gas at hetero‐interface and multi‐channel conduction under dual‐sweep driving.
Mohammad Masum Billah, Md Mobaidul Islam, Sunaina Priyadarshi, Jung Bae Kim, Yang Ho Bae, Rodney Lim, Dejiu Fan, Zero Hung, Dong Kil Yim, Soo Yong Choi, Youron Lin, Juergen Grillmayer, Custer Ma, Lynn Yang, Julian Chen, Jin Jang   +15 more
wiley   +1 more source

Superconducting quantum computing optimization based on multi-objective deep reinforcement learning. [PDF]

Sci Rep
Liu Y.
europepmc   +1 more source

Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current

Advanced Electronic Materials, EarlyView.
Hydrogen‐terminated diamond FETs with an accumulation channel architecture achieve extreme enhancement‐mode operation (Vth < ‐6 V) and high on‐current (> 80 mA mm−1). This is realized by creating a high‐quality H‐diamond surface with an unpinned Fermi level and encapsulating the channel in dual stacks of Al2O3 Improved hole mobility (~ 110 cm2 V−1 s−1)
Chunlin Qu, Isha Maini, Qing Guo, Alastair Stacey, David A. J. Moran   +4 more
wiley   +1 more source

Period-doubling in the phase dynamics of a shunted HgTe quantum well Josephson junction. [PDF]

Nat Commun
Liu W, Piatrusha SU, Liang X, Upadhyay S, Fürst L, Gould C, Kleinlein J, Buhmann H, Stehno MP, Molenkamp LW.   +9 more
europepmc   +1 more source

Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts

Advanced Electronic Materials, EarlyView.
The semimetal carbon nanotubes (CNT) contacts are used to fabricate reconfigurable WSe2 transistors for the first time, which have excellent electrical performance with a high on/off ratio of over 107 as a field effect transistor (FET) and an ultra‐high rectification ratio of over 106 as a diode.
Xuanzhang Li, Yuheng Li, Zhen Mei, Liang Liang, Qunqing Li, Shoushan Fan, Yang Wei   +6 more
wiley   +1 more source