Results 261 to 270 of about 2,313,857 (309)

Evolution of electronic correlation in highly doped organic two-dimensional hole gas. [PDF]

Nat Commun
Kasuya N, Furukawa T, Ishii H, Kobayashi N, Hirose K, Takayanagi H, Okamoto T, Watanabe S, Takeya J.   +8 more
europepmc   +1 more source

Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors

Advanced Electronic Materials, EarlyView.
A method for preparing M3D circuits based on an in situ synthesis process is presented. Through thermal evaporation, followed by a low‐temperature treatment, p‐Te, and n‐Bi2S3 channel materials are easily synthesized. The excellent uniformity enables the fabrication of logic gates beyond inverters.
Yuqia Ran, Yiwen Song, Long Li, Xujin Song, Pingfan Gu, Qi Wang, Haifeng Du, Jinfeng Kang, Yu Ye   +8 more
wiley   +1 more source

Entanglement detection with quantum support vector machine (QSVM) on near-term quantum devices. [PDF]

Sci Rep
Mahdian M, Mousavi Z.
europepmc   +1 more source

Pulse Dynamics in Reduced Graphene Oxide Electrolyte‐Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion‐To‐Electron Transduction

Advanced Electronic Materials, EarlyView.
The time‐dependent current response of reduced graphene oxide (rGO) electrolyte‐gated transistors (EGTs) is evaluated via pulsed voltage measurements. A complex interplay between ion entrapment, electrical double‐layer formation, and charge transfer processes is observed.
Guilherme Segolin Selmi, Eduardo Rodrigues Lourenço Neto, Gabrielle Coelho Lelis, Anderson Kenji Okazaki, Antonio Riul Jr., Maria Luisa Braunger, Rafael Furlan de Oliveira   +6 more
wiley   +1 more source

Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions. [PDF]

Sci Rep
Cherik IC, Mohammadi S, Hurley PK, Ansari L, Gity F.   +4 more
europepmc   +1 more source

Micro‐Engraving UV‐Sensitive Thin‐Film Transistor from Metal–Metal Oxide Nanoparticles with Band‐Gap Engineering

Advanced Electronic Materials, EarlyView.
This study reports the development of UV‐sensitive thin‐film transistors using Ag‐doped ZnO nanoparticles. Through an engraving transfer printing process, high‐resolution patterning of conductive channels achieves feature sizes down to 2 µm. The optimal Ag‐doped ZnO nanoparticles enhance electron mobility and UV responsiveness compared to pristine ZnO ...
U Jeong Yang, Sehyun Park, Woosung Choi, Vladimir V. Tsukruk   +3 more
wiley   +1 more source

Interferometric single-shot parity measurement in InAs-Al hybrid devices. [PDF]

Nature
Microsoft Azure Quantum, Aghaee M, Alcaraz Ramirez A, Alam Z, Ali R, Andrzejczuk M, Antipov A, Astafev M, Barzegar A, Bauer B, Becker J, Bhaskar UK, Bocharov A, Boddapati S, Bohn D, Bommer J, Bourdet L, Bousquet A, Boutin S, Casparis L, Chapman BJ, Chatoor S, Christensen AW, Chua C, Codd P, Cole W, Cooper P, Corsetti F, Cui A, Dalpasso P, Dehollain JP, de Lange G, de Moor M, Ekefjärd A, El Dandachi T, Estrada Saldaña JC, Fallahi S, Galletti L, Gardner G, Govender D, Griggio F, Grigoryan R, Grijalva S, Gronin S, Gukelberger J, Hamdast M, Hamze F, Hansen EB, Heedt S, Heidarnia Z, Herranz Zamorano J, Ho S, Holgaard L, Hornibrook J, Indrapiromkul J, Ingerslev H, Ivancevic L, Jensen T, Jhoja J, Jones J, Kalashnikov KV, Kallaher R, Kalra R, Karimi F, Karzig T, King E, Kloster ME, Knapp C, Kocon D, Koski JV, Kostamo P, Kumar M, Laeven T, Larsen T, Lee J, Lee K, Leum G, Li K, Lindemann T, Looij M, Love J, Lucas M, Lutchyn R, Madsen MH, Madulid N, Malmros A, Manfra M, Mantri D, Markussen SB, Martinez E, Mattila M, McNeil R, Mei AB, Mishmash RV, Mohandas G, Mollgaard C, Morgan T, Moussa G, Nayak C, Nielsen JH, Nielsen JM, Nielsen WHP, Nijholt B, Nystrom M, O'Farrell E, Ohki T, Otani K, Paquelet Wütz B, Pauka S, Petersson K, Petit L, Pikulin D, Prawiroatmodjo G, Preiss F, Puchol Morejon E, Rajpalke M, Ranta C, Rasmussen K, Razmadze D, Reentila O, Reilly DJ, Ren Y, Reneris K, Rouse R, Sadovskyy I, Sainiemi L, Sanlorenzo I, Schmidgall E, Sfiligoj C, Shah MB, Simoes K, Singh S, Sinha S, Soerensen T, Sohr P, Stankevic T, Stek L, Stuppard E, Suominen H, Suter J, Teicher S, Thiyagarajah N, Tholapi R, Thomas M, Toomey E, Tracy J, Turley M, Upadhyay S, Urban I, Van Hoogdalem K, Van Woerkom DJ, Viazmitinov DV, Vogel D, Watson J, Webster A, Weston J, Winkler GW, Xu D, Yang CK, Yucelen E, Zeisel R, Zheng G, Zilke J.   +162 more
europepmc   +1 more source

Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating

Advanced Electronic Materials, EarlyView.
The 2D carrier density of LaInO3/BaSnO3 2DEG to 1014 cm−2 by ionic‐liquid gating is increased and we found the resulting mobility enhancement up to 2100 cm2 V−1 s−1 at 10 K, which is consistent with the fact that 2‐dimensionality offers more effective screening for defects.
Jaehyeok Lee, Hyeongmin Cho, Jisung Park, Bongju Kim, Darrell G. Schlom, Kookrin Char   +5 more
wiley   +1 more source

A quantum dot in germanium proximitized by a superconductor. [PDF]

Nat Mater
Lakic L, Lawrie WIL, van Driel D, Stehouwer LEA, Su Y, Veldhorst M, Scappucci G, Kuemmeth F, Chatterjee A.   +8 more
europepmc   +1 more source

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study demonstrates both low‐resistance contacts and extension doping for p‐type monolayer WSe2 field‐effect transistors. The insertion of an amorphous monolayer WOxSey under evaporated metal contacts reduces the contact resistance by over an order of magnitude, achieving a low value of 1.2 ± 0.3 kΩ µm for monolayer WSe2.
Sihan Chen, Yue Zhang, William P. King, Rashid Bashir, Arend M. van der Zande   +4 more
wiley   +1 more source