Results 271 to 280 of about 2,313,857 (309)

An improved quantum algorithm of the multislice method. [PDF]

iScience
Wang Y, Sun Y, Ding Z.
europepmc   +1 more source

Self‐Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection

Advanced Electronic Materials, EarlyView.
This paper presents a self‐aligned heterojunction gate phototransistor that eliminates the need for high‐precision alignment tools. The device achieves a high responsivity of 2.9 × 105 A W−1 and a specific detectivity of 9.6 × 1013 Jones, comparable to the performance of non‐self‐aligned devices requiring complex fabrication.
Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang   +9 more
wiley   +1 more source

Circuit implementation and analysis of a quantum-walk based search complement algorithm. [PDF]

Sci Rep
Wing-Bocanegra A, Quintero-Narvaez CE, Venegas-Andraca SE.   +2 more
europepmc   +1 more source

Quantum computation in the neuronal microtubules: quantum gates, ordered water and superradiance

, 2002
Данко Георгиев
openalex   +2 more sources

BiSbF2 Monolayer: A 2D Inversion‐Asymmetric Topological Insulator With Linearly Tunable Giant Spin‐Splitting and Bulk Gap

Advanced Electronic Materials, EarlyView.
The BiSbF2 monolayer is a 2D topological insulator with a large bandgap (252 meV) hosting topological edge states and giant valley‐contrasted spin‐splitting (478 meV). The sizable gap enables room‐temperature quantum spin Hall effects, while its coexisting topological and valleytronic features provide a versatile platform for exploring topological ...
Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu   +4 more
wiley   +1 more source

Towards a quantum synapse for quantum sensing. [PDF]

Sci Rep
Pau LF.
europepmc   +1 more source

Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon

Advanced Electronic Materials, EarlyView.
This study reveals a novel failure mode in SiO₂/Si₃N₄ stacked capacitors, where dopant diffusion leads to interfacial oxide thinning, reducing dielectric breakdown voltage. Experimental results show that n type capacitors exhibit superior reliability, whereas p type capacitors fail rapidly.
Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian   +7 more
wiley   +1 more source

Switching polariton screening in MoS₂ microcavity toward polaritonics. [PDF]

Sci Adv
Mondal A, Biswas C, Ghising P, Moon BH, Kim KK, Lee YH.   +5 more
europepmc   +1 more source

Spintronic Memtransistor Leaky Integrate and Fire Neuron for Spiking Neural Networks

Advanced Electronic Materials, EarlyView.
Spintronic memtransistor neurons based on domain walls enable energy‐efficient, field‐gated, and current‐controlled LIF functionality for neuromorphic computing, as demonstrated. When integrated into spiking neural network architectures, these devices achieve >96% pattern recognition accuracy, demonstrating high performance, scalability, and mem ...
Aijaz H. Lone, Meng Tang, Daniel N. Rahimi, Xuecui Zou, Dongxing Zheng, Hossein Fariborzi, Xixiang Zhang, Gianluca Setti   +7 more
wiley   +1 more source