Results 281 to 290 of about 2,092,913 (379)

Scalable programmable quantum gates and a new aspect of the additivity problem for the classical capacity of quantum channels [PDF]

, 2002
Andreas Winter
openalex   +1 more source

Achieving Direct Bandgap and Optoelectronic Enhancement in Scalable Stacked MoS2 Monolayers

Advanced Materials Interfaces, EarlyView.
A scalable method for stacking large‐area monolayer MoS2 films grown by chemical vapor deposition (CVD) is presented. The approach employs poly(methyl methacrylate) (PMMA) as a carrier polymer and an aluminum mesh to support the films during transfer from the donor to the receiver substrate, maintaining its geometry and preventing folding.
Muhammad Aamir Abbas, Timothy Ismael, Josh M. Sasson, Owen P. Harris, Matthew D. Escarra   +4 more
wiley   +1 more source

<i>Ab initio</i> quantum transport investigation of Sub-3 nm β-InSe transistors for future high-performance nanoelectronics. [PDF]

RSC Adv
Ghafoor M, Khan R, Din SU, Safeen A, Li Q, Yang X, Yang Z, Lu J.   +7 more
europepmc   +1 more source

From Stripes to Hexagons: Strain‐Induced 2D Pb Phases Confined Between Graphene and SiC

Advanced Materials Interfaces, EarlyView.
Intercalating Pb beneath epitaxial graphene on SiC(0001) stabilizes distinct 2D phases at the interface. Using LEED, LEEM, SEM, and STM, the formation of characteristic stripe and hexagonal Pb monolayer structures is observed, and atomistic models are provided.
Markus Gruschwitz, Sergii Sologub, Zamin Mamiyev, Chitran Ghosal, Yuran Niu, Alexei Zakharov, Christoph Tegenkamp   +6 more
wiley   +1 more source

Gate-Induced Static and Dynamic Nonlinearity Characteristics of Bilayer Graphene Field-Effect Transistors (Bi-GFETs). [PDF]

Micromachines (Basel)
Kakar VK, Munindra, Pal PK.
europepmc   +1 more source

One Dimensional Metal Oxide Semiconductor Nanotransistors

Advanced Materials Technologies, EarlyView.
This review assesses one dimensional metal oxide NW‐FETs as promising alternatives to conventional transistors. It explores how advances in architecture, material composition, and fabrication processes expand device capabilities. Emphasis is placed on novel gate configurations, different metal oxide nanowires, and post‐treatment methods, which ...
Mariana D. Cortinhal, Ana I. B. Rovisco, Pedro M. C. Barquinha   +2 more
wiley   +1 more source

Supercurrent time division multiplexing with solid-state integrated hybrid superconducting electronics. [PDF]

Nat Commun
Paghi A, Borgongino L, Tortorella S, De Simoni G, Strambini E, Sorba L, Giazotto F.   +6 more
europepmc   +1 more source

Advanced Materials in Responsible Electronics: Innovations for Sustainability, Health, and Circularity

Advanced Materials Technologies, EarlyView.
Contemporary electronic devices produce significant waste, harming ecosystems. Innovation in design, consumption, materials, and end‐of‐life management is crucial. This review explores advanced materials for sustainable and responsible electronics, highlighting their potential to reduce environmental and health hazards while improving device ...
Rawan Omar, Jiawei Yang, Tan‐Phat Huynh, Kiran Gulia, Sooyun Caroline Tavolacci, Weiwei Wu, Yan Wang, Hossam Haick   +7 more
wiley   +1 more source

Detecting the purely imaginary Fisher zeros of an Ising spin system on a quantum computer. [PDF]

Sci Rep
Kuzmak AR, Tkachuk VM.
europepmc   +1 more source

Organic Neuromorphic Transistors with Crosslinked Poly(vinyl alcohol)‐Based Memory Layers Controlled by Thermal Annealing Process

Advanced Materials Technologies, EarlyView.
The crosslinked poly(vinyl alcohol) (X‐PVA) in the presence of acidic polymer catalyst (PAMPSA) is formed in solid‐state films by thermal annealing at 150 ℃ for 10 min, delivering the best hysteresis characteristics for efficient organic synaptic transistors (OSTRs) with a recognition accuracy of 96%.
Seungmok Lee, Hwajeong Kim, Nicola Gasparini, Youngkyoo Kim   +3 more
wiley   +1 more source