Results 181 to 190 of about 108,083 (217)

Micro‐Engraving UV‐Sensitive Thin‐Film Transistor from Metal–Metal Oxide Nanoparticles with Band‐Gap Engineering

Advanced Electronic Materials, EarlyView.
This study reports the development of UV‐sensitive thin‐film transistors using Ag‐doped ZnO nanoparticles. Through an engraving transfer printing process, high‐resolution patterning of conductive channels achieves feature sizes down to 2 µm. The optimal Ag‐doped ZnO nanoparticles enhance electron mobility and UV responsiveness compared to pristine ZnO ...
U Jeong Yang, Sehyun Park, Woosung Choi, Vladimir V. Tsukruk   +3 more
wiley   +1 more source

Quantum Error Mitigation in Optimized Circuits for Particle-Density Correlations in Real-Time Dynamics of the Schwinger Model. [PDF]

Entropy (Basel)
Pomarico D, Pandey M, Cioli R, Dell'Anna F, Pascazio S, Pepe FV, Facchi P, Ercolessi E.   +7 more
europepmc   +1 more source

Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating

Advanced Electronic Materials, EarlyView.
The 2D carrier density of LaInO3/BaSnO3 2DEG to 1014 cm−2 by ionic‐liquid gating is increased and we found the resulting mobility enhancement up to 2100 cm2 V−1 s−1 at 10 K, which is consistent with the fact that 2‐dimensionality offers more effective screening for defects.
Jaehyeok Lee, Hyeongmin Cho, Jisung Park, Bongju Kim, Darrell G. Schlom, Kookrin Char   +5 more
wiley   +1 more source

Finding Key Nodes in Complex Networks Through Quantum Deep Reinforcement Learning. [PDF]

Entropy (Basel)
Xiong J, Ren XL, Lü L.
europepmc   +1 more source

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study demonstrates both low‐resistance contacts and extension doping for p‐type monolayer WSe2 field‐effect transistors. The insertion of an amorphous monolayer WOxSey under evaporated metal contacts reduces the contact resistance by over an order of magnitude, achieving a low value of 1.2 ± 0.3 kΩ µm for monolayer WSe2.
Sihan Chen, Yue Zhang, William P. King, Rashid Bashir, Arend M. van der Zande   +4 more
wiley   +1 more source

Lattice Surgery for Dummies. [PDF]

Sensors (Basel)
Chatterjee A, Das S, Ghosh S.
europepmc   +1 more source

High‐Efficiency Optoelectronic Modulation in Quasi‐2D Perovskite‐Based Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
2‐thiophenemethylammonium (ThMA+) spacer cation‐based quasi‐2D (ThMA)2(MA)n‐1PbnI3n+1 (n = 4) photoelectric field‐effect transistors are developed, and its optoelectronic performance and neuromorphic computing are explored. Abstract Optoelectronic modulated transistors based on organic–inorganic halide perovskites can perceive and parse visual ...
Wenwen Wang, Yao Li, Jiangdong Zhang, Menghan Chen, Jia Liu, Jiahao Kang, Jinjin Zhao   +6 more
wiley   +1 more source

Benchmarking the performance of quantum computing software for quantum circuit creation, manipulation and compilation. [PDF]

Nat Comput Sci
Nation PD, Saki AA, Brandhofer S, Bello L, Garion S, Treinish M, Javadi-Abhari A.   +6 more
europepmc   +1 more source

Self‐Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection

Advanced Electronic Materials, EarlyView.
This paper presents a self‐aligned heterojunction gate phototransistor that eliminates the need for high‐precision alignment tools. The device achieves a high responsivity of 2.9 × 105 A W−1 and a specific detectivity of 9.6 × 1013 Jones, comparable to the performance of non‐self‐aligned devices requiring complex fabrication.
Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang   +9 more
wiley   +1 more source

Quantum-inspired logic for advanced Transcriptional Programming. [PDF]

Nucleic Acids Res
Milner PT, Kim D, Wilson CJ.
europepmc   +1 more source