Results 191 to 200 of about 108,083 (217)

BiSbF2 Monolayer: A 2D Inversion‐Asymmetric Topological Insulator With Linearly Tunable Giant Spin‐Splitting and Bulk Gap

Advanced Electronic Materials, EarlyView.
The BiSbF2 monolayer is a 2D topological insulator with a large bandgap (252 meV) hosting topological edge states and giant valley‐contrasted spin‐splitting (478 meV). The sizable gap enables room‐temperature quantum spin Hall effects, while its coexisting topological and valleytronic features provide a versatile platform for exploring topological ...
Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu   +4 more
wiley   +1 more source

The impact of quantum circuit architecture and hyperparameters on variational quantum algorithms exemplified in the electronic structure of the GaAs crystal. [PDF]

Sci Rep
Miháliková I, Krejčí M, Friák M.
europepmc   +1 more source

Quantum Transport in SnTe Nanowire Devices

Advanced Electronic Materials, EarlyView.
A variety of quantum transport experiments are observed in SnTe nanowire devices and attributed to microscopic differences in the fabrication. Three categories can be distinguished: semiconducting behavior, partial superconductivity and Fabry‐Pérot oscillations.
Femke J. Witmans, Mathijs G. C. Mientjes, Maarten J. G. Kamphuis, Vince van de Sande, Xin Guan, Hans Bolten, Marcel A. Verheijen, Chuan Li, Joost Ridderbos, Erik P.A.M. Bakkers, Alexander Brinkman, Floris A. Zwanenburg   +11 more
wiley   +1 more source

Unconditional advantage of noisy qudit quantum circuits over biased threshold circuits in constant depth. [PDF]

Nat Commun
de Oliveira M, Subramanian S, Mendes L, Hsieh MH.   +3 more
europepmc   +1 more source

Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon

Advanced Electronic Materials, EarlyView.
This study reveals a novel failure mode in SiO₂/Si₃N₄ stacked capacitors, where dopant diffusion leads to interfacial oxide thinning, reducing dielectric breakdown voltage. Experimental results show that n type capacitors exhibit superior reliability, whereas p type capacitors fail rapidly.
Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian   +7 more
wiley   +1 more source

Unsupervised beyond-standard-model event discovery at the LHC with a novel quantum autoencoder. [PDF]

Quantum Mach Intell
Duffy C, Hassanshahi M, Jastrzebski M, Malik S.   +3 more
europepmc   +1 more source

Spintronic Memtransistor Leaky Integrate and Fire Neuron for Spiking Neural Networks

Advanced Electronic Materials, EarlyView.
Spintronic memtransistor neurons based on domain walls enable energy‐efficient, field‐gated, and current‐controlled LIF functionality for neuromorphic computing, as demonstrated. When integrated into spiking neural network architectures, these devices achieve >96% pattern recognition accuracy, demonstrating high performance, scalability, and mem ...
Aijaz H. Lone, Meng Tang, Daniel N. Rahimi, Xuecui Zou, Dongxing Zheng, Hossein Fariborzi, Xixiang Zhang, Gianluca Setti   +7 more
wiley   +1 more source

An improved quantum algorithm of the multislice method. [PDF]

iScience
Wang Y, Sun Y, Ding Z.
europepmc   +1 more source

Solution‐Processed Sterically Hindered Donor–Acceptor Small Molecules as Molecular Floating‐Gates for High‐Efficiency Ambipolar Charge Trapping Memory

Advanced Electronic Materials, EarlyView.
High‐efficiency ambipolar multilevel nonvolatile organic transistor memory using solution‐processing a sterically hindered small molecule spiro[fluorene‐9,7′‐dibenzo[c,h]acridine]‐5′‐one with donor–acceptor structures as charge trapping layer is demonstrated.
Yuyu Liu, Zhen Shao, Yue Li, Jing Liu, Lingzhi Jin, Yiru Wang, Wen Li, Linghai Xie, Haifeng Ling   +8 more
wiley   +1 more source

Implementation of double Feynman gate in high dimensional quantum systems. [PDF]

Sci Rep
Zhu Y, Shang J, Fan YN, Kou Y, Qu X, Yan XA, Zhang Y, Wang F.   +7 more
europepmc   +1 more source