Results 111 to 120 of about 19,211 (303)

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

Upstream modes and antidots poison graphene quantum Hall effect. [PDF]

open access: yesNat Commun, 2021
Moreau N   +6 more
europepmc   +1 more source

Degradable Magnetic Composites from Recycled NdFeB Magnets for Soft Actuation and Sensing

open access: yesAdvanced Robotics Research, EarlyView.
This work presents a degradable soft magnetic composite made from recycled NdFeB particles embedded in a gelatin‐based organogel. The material is processed into magnetic sensors and soft robotic components, which can later be dissolved in a green solvent to recover NdFeB magnetic particles.
Muhammad Bilal Khan   +14 more
wiley   +1 more source

The Quantum Hall Effect under the Influence of Gravity and Inertia: A Unified Approach

open access: yesUniverse
The quantum Hall effect under the influence of gravity and inertia is studied in a unified way. We make use of an algebraic approach, as opposed to an analytic approach. We examine how both the integer and the fractional quantum Hall effects behave under
Alexandre Landry   +2 more
doaj   +1 more source

Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology. [PDF]

open access: yesIEEE Trans Electron Devices, 2021
Kruskopf M   +10 more
europepmc   +1 more source

Magnetic Anisotropy Modulation via van der Waals Gap Engineering in 2D Ferromagnet Fe4GeTe2

open access: yesAdvanced Science, EarlyView.
This study demonstrates a new route to control magnetic anisotropy in 2D ferromagnets via van der Waals gap engineering. In Fe4GeTe2, an interface‐induced vdW gap expansion is found to anomalously enhance in‐plane magnetic anisotropy while suppressing the spin reorientation transition.
Weiran Xie   +13 more
wiley   +1 more source

Graphene quantum Hall effect parallel resistance arrays. [PDF]

open access: yesPhys Rev B, 2021
Panna AR   +11 more
europepmc   +1 more source

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