Results 131 to 140 of about 19,211 (303)

Evaluating the Resistance of Bifacial Perovskite Photodetectors to Xenon Ion Irradiation

Advanced Science, EarlyView.
Bifacial perovskite photodetectors maintain high efficiency and stability after 231 MeV xenon ion irradiation. Key photodetector parameters remain nearly unchanged at low fluence (1010 nucleons cm−2) and show only moderate degradation at high fluence (1011 nucleons cm−2), highlighting their strong radiation tolerance and suitability for optoelectronic ...
Yerassyl Yerlanuly, Hryhorii P. Parkhomenko, Almaz R. Beisenbayev, Maxim V. Zdorovets, Annie Ng, Askhat N. Jumabekov   +5 more
wiley   +1 more source

Quantum simulation in Fock-state lattices

Advances in Physics: X
Fock-state lattices (FSLs) consist of the Fock states of photons and atoms, establishing a quantum photonic platform for simulating condensed matter physics.
Jiale Yuan, Han Cai, Da-Wei Wang
doaj   +1 more source

Evolution of Berry curvature and Quantum Anomalous Hall Effect in an Intrinsic Magnetic Topological Insulator [PDF]

, 2021
Chui‐Zhen Chen, Dong-Hui Xu, X. C. Xie
openalex  

Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation

Advanced Science, EarlyView.
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen, Fuwei Yang, Tielin Wu, Yelingyi Wang, Quanshui Zheng, Deli Peng, Zhanghui Wu   +6 more
wiley   +1 more source

Giant Polar Displacements via Strain Relaxation in Itinerant Ferromagnet SrRuO3 Freestanding Films

Advanced Science, EarlyView.
The discovery of substantial Ru off‐centre displacements exceeding 30 pm in SrRuO3 freestanding films is reported, achieved by properly controlling the strain relaxation process to engineer an expanded lattice. The work shows that tailored strain relaxation strategies can be used to design magnetic polar metals with desired electronic states in ...
Xingcan Zhou, Zhangzhang Cui, Qiang Deng, Yechen Wang, Shuyu Dong, Zhou Wang, Qinwen Lu, Jianlin Wang, Qiuping Huang, Zhengping Fu, Bin Xiang, Qingyou Lu, Yalin Lu   +12 more
wiley   +1 more source

Fermionic Chern-Simons theory for the fractional quantum Hall effect in bilayers [PDF]

, 1995
Ana M. López, Eduardo Fradkin
openalex   +1 more source

Decoding Trap States in Working 2D Perovskite Multi‐Functional Devices

Advanced Science, EarlyView.
Illustration of the photoluminescence spectrum and energy‐level landscape governing trap‐mediated carrier dynamics in 2D F‐PEAI photodetectors. A novel approach capturing dynamic trap occupation and retrapping in devices under operating conditions, directly links defect energetics to carrier transport and enhanced photoresponse in multifunctional ...
Ioannis Leontis, Karl Jonas Riisnaes, Hoi Tung Lam, Rosanna Mastria, Luisa De Marco, Annalisa Coriolano, Steven Hepplestone, Monica Felicia Craciun, Saverio Russo   +8 more
wiley   +1 more source

Hierarchical Strain‐Modified Medium‐Entropy Carbide Ceramics Exhibit Exceptional Ablation Resistance up to 2400°C

Advanced Science, EarlyView.
A novel strategy is developed by doping reduced graphene oxide (rGO) into a (HfZrTi)C medium‐entropy ceramic. This induces a hierarchical strain modification mechanism, synergistically inhibiting crack propagation at the microscale and dissipating stress at the mesoscale.
Junyi Xiao, Pengfei He, Lin Xue, Shujun Hu, Liliang Shao, Chuan Sun, Yunyun Ge, Jiangbo Cheng, Xiubing Liang   +8 more
wiley   +1 more source

Quantum Spin Hall Effect in Inverted Type-II Semiconductors [PDF]

, 2008
Chao‐Xing Liu, Taylor L. Hughes, Xiao-Liang Qi, Kang Wang, Shou-Cheng Zhang   +4 more
openalex   +1 more source

Large Anomalous Hall Effect, Non‐Vanishing Berry Curvature in (110) FeRh Antiferromagnet Films via Interface Strain

Advanced Science, EarlyView.
This study demonstrates a strain‐tunable anomalous Hall response in the (110)‐oriented FeRh thin film. First‐principles calculations reveal that strain‐induced symmetry lowering redistributes Berry curvature near the Fermi level via band shifts and avoided crossings.
Yun‐Ho Kim, Gil‐Sung Kim, Jae Won Choi, Jung‐Min Cho, Won‐Yong Lee, Hongkee Yoon, Yeonho Choi, Shelby Fields, Steven Bennett, Mona Zebarjadi, Young‐Gui Yoon, Sang‐Kwon Lee   +11 more
wiley   +1 more source