Results 191 to 200 of about 18,734 (309)

Universal Prefactor of Activated Conductivity in the Quantum Hall Effect [PDF]

, 1995
D. G. Polyakov, B. I. Shklovskiǐ
openalex   +1 more source

Intrinsic Strain‐Driven Topological Evolution in SrRuO3 via Flexural Strain Engineering

Advanced Electronic Materials, EarlyView.
A flexural strain platform is developed to isolate intrinsic strain effects on the topological electronic structure in SrRuO3, and demonstrates that the topological properties and associated anomalous Hall effect can be effectively modulated via strain engineering without introducing phase transitions or crystal defects, offering a new approach for ...
Liguang Gong, Hongping Jiang, Bin Lao, Xuan Zheng, Xuejiao Chen, Zhicheng Zhong, Yan Sun, Xianfeng Hao, Milan Radovic, Run‐Wei Li, Zhiming Wang   +10 more
wiley   +1 more source

Quantum Hall effect in epitaxial graphene with permanent magnets. [PDF]

Sci Rep, 2016
Parmentier FD, Cazimajou T, Sekine Y, Hibino H, Irie H, Glattli DC, Kumada N, Roulleau P.   +7 more
europepmc   +1 more source

Coulomb drag of edge excitations in the Chern-Simons theory of the fractional quantum Hall effect [PDF]

, 1996
Dror Orgad, Shimon Levit
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Tunable Anomalous Hall Effect in Non‐Magnetic Topological Semimetal Cd3As2 Nanoplates

Advanced Electronic Materials, EarlyView.
A gate‐tunable anomalous Hall effect (AHE) is demonstrated in the non‐magnetic Dirac semimetal Cd3As2, with maximal anomalous Hall resistivity near the Dirac point. Scaling fitting reveals that the AHE originates from intrinsic Berry curvature, offering insights into potential applications in topological electronic devices.
Xin‐Jie Liu, Liang Xiong, Jia‐Peng Peng, Xiang‐Long Yu, Yan‐Fei Wu, Shuo Wang, Ben‐Chuan Lin, Shou‐Guo Wang   +7 more
wiley   +1 more source

Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd₃As₂. [PDF]

Nat Commun, 2017
Zhang C, Narayan A, Lu S, Zhang J, Zhang H, Ni Z, Yuan X, Liu Y, Park JH, Zhang E, Wang W, Liu S, Cheng L, Pi L, Sheng Z, Sanvito S, Xiu F.   +16 more
europepmc   +1 more source

Gamma(2) modular symmetry, renormalization group flow and the quantum hall effect [PDF]

, 1999
Y. M. Georgelin, Thierry Masson, Jean-Christophe Wallet   +2 more
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High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
High‐performance enhancement‐mode MOSFET devices made from ultra‐wide bandgap semiconductor CaSnO3 are demonstrated for the first time with an on/off ratio exceeding 108, field‐effect mobility of 8.4 cm2 V−1 s−1, low contact resistance of 0.73 kΩ·µm, and a record breakdown field of ∼8.3 MV cm−1.
Weideng Sun, Junghyun Koo, Donghwan Kim, Hongseung Lee, Rishi Raj, Chengyu Zhu, Kiyoung Lee, Andre Mkhoyan, Hagyoul Bae, Bharat Jalan, Gang Qiu   +10 more
wiley   +1 more source

Observation of the quantum Hall effect in δ-doped SrTiO3. [PDF]

Nat Commun, 2016
Matsubara Y, Takahashi KS, Bahramy MS, Kozuka Y, Maryenko D, Falson J, Tsukazaki A, Tokura Y, Kawasaki M.   +8 more
europepmc   +1 more source

Colored noise in the fractional quantum Hall effect: Duality relations and exact results [PDF]

, 1999
Claudio Chamon, Denise E. Freed
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