Results 251 to 260 of about 1,050,604 (332)

Mimicking Synaptic Plasticity: Optoionic MoS2 Memory Powered by Biopolymer Hydrogels as a Dynamic Cations Reservoir

open access: yesAdvanced Functional Materials, EarlyView.
Janus (MoS2) transistors functionalized with sodium alginate (SA) and poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)] exhibit persistent photo‐induced ionic gating, driven by dynamic cation migration at the hybrid interface. This ionic mechanism enables finely tunable photoconductivity and emulates key synaptic plasticity behaviors ...
Yeonsu Jeong   +5 more
wiley   +1 more source

Bright Monocompound Metal Halide Scintillator for Fast Neutron Radiography

open access: yesAdvanced Functional Materials, EarlyView.
Metal halide scintillator, tetraphenylphosphonium manganese bromide (TPP2MnBr4), provides a significant benefit for fast neutron imaging. A fourfold increase in efficiency over traditional zinc sulfide screens is achieved by efficiently utilizing neutron interactions within its homogeneous structure.
Aditya Bhardwaj   +13 more
wiley   +1 more source

Understanding Functional Materials at School

open access: yesAdvanced Functional Materials, EarlyView.
This review outlines strategies for effectively teaching nanoscience in schools, focusing on challenges such as scale comprehension and curriculum integration. Emphasizing inquiry‐based learning and chemistry core concepts, it showcases hands‐on activities, digital tools, and interdisciplinary approaches.
Johannes Claußnitzer, Jürgen Paul
wiley   +1 more source

Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection

open access: yesAdvanced Functional Materials, EarlyView.
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang   +12 more
wiley   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee   +5 more
wiley   +1 more source

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