Results 221 to 230 of about 226,911 (338)

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

A Mechanistic Study of Bio‐Based Nanotemplated Carbon Nanofibers Derived From Water Processable Lignin Blends for Sustainable Energy Storage Applications

open access: yesAdvanced Materials, EarlyView.
As‐spun carbon materials produced from Lignosulfonate, gelatin, and alginate, selected for water solubility, and ability to produce templated sustainable carbon nanostructures. Gelatin and alginate are sacrificial during thermal processing, allowing the production of engineered high surface area nanostructures, which are further characterized for ...
Judith Miralda‐Jalle   +6 more
wiley   +1 more source

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

open access: yesAdvanced Materials, EarlyView.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu   +19 more
wiley   +1 more source

Fully heterogeneous prepare-and-measure quantum network for the next stage of quantum internet. [PDF]

open access: yesNat Commun
Lu FY   +12 more
europepmc   +1 more source

Rutile Without Substrate Limitations: Top‐Interface‐Driven Crystallization of TiO2

open access: yesAdvanced Materials, EarlyView.
A RuO2 upper layer acts as a removable crystallization template that triggers rutile TiO2 formation from the top interface, independent of the underlying substrate. This top‐interface‐driven crystallization mechanism enables rutile growth even on amorphous ZrO2/TiN, offering a substrate‐agnostic route to high‐k dielectrics compatible with DRAM process ...
Jihoon Jeon   +3 more
wiley   +1 more source

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