Results 151 to 160 of about 128,254 (319)
Advanced Science, EarlyView.A thin topological insulator (Bi2Te3) inserted between two single magnetic septuple layers of MnBi2Te4 is shown to convert the intrinsic antiferromagnetic interlayer coupling into robust ferromagnetism. As the Bi2Te3 spacer thickness increases from 1 to 4 quintuple layers, the weakening coercivity, Curie temperature, and interlayer coupling reveal ...
Enayet Hossain +10 more
wiley +1 more source
Magnetic and Crystal Symmetry Control on Spin Hall Conductivity in Altermagnets
Advanced Science, EarlyView.Crystal structures and schematic illustrations of the spin Hall effect (SHE) in altermagnets. High‐symmetry RuO2 exhibits conventional SHE, while tilted RuO2 shows trivial unconventional SHE (USHE) caused by structural tilting. CrSb and MnTe, with reduced magnetic symmetry, display intrinsic USHE arising from symmetry‐driven spin–momentum locking ...
Dameul Jeong +2 more
wiley +1 more source
Evaluating the Resistance of Bifacial Perovskite Photodetectors to Xenon Ion Irradiation
Advanced Science, EarlyView.Bifacial perovskite photodetectors maintain high efficiency and stability after 231 MeV xenon ion irradiation. Key photodetector parameters remain nearly unchanged at low fluence (1010 nucleons cm−2) and show only moderate degradation at high fluence (1011 nucleons cm−2), highlighting their strong radiation tolerance and suitability for optoelectronic ...
Yerassyl Yerlanuly +5 more
wiley +1 more source
Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers. II. Zero-field topological superconductivity [PDF]
, 2022 Tania Paul +2 more
openalex +3 more sources
Phonon-mediated spin transport in quantum paraelectric metals
npj Quantum MaterialsThe concept of ferroelectricity is now often extended to include continuous inversion symmetry-breaking transitions in various metals and doped semiconductors.
Kyoung-Min Kim, Suk Bum Chung
doaj +1 more source
Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation
Advanced Science, EarlyView.Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen +6 more
wiley +1 more source
Quantum spin Hall effect in two-dimensional transition metal dichalcogenides [PDF]
, 2014 Xiaofeng Qian +3 more
openalex +1 more source
Giant Polar Displacements via Strain Relaxation in Itinerant Ferromagnet SrRuO3 Freestanding Films
Advanced Science, EarlyView.The discovery of substantial Ru off‐centre displacements exceeding 30 pm in SrRuO3 freestanding films is reported, achieved by properly controlling the strain relaxation process to engineer an expanded lattice. The work shows that tailored strain relaxation strategies can be used to design magnetic polar metals with desired electronic states in ...
Xingcan Zhou +12 more
wiley +1 more source
npj SpintronicsThe spin-Hall effect underpins some of the most active topics in modern physics, including spin torques and the inverse spin-Hall effect, yet it lacks a proper theoretical description.
Hongyang Ma +4 more
doaj +1 more source