Results 61 to 70 of about 128,254 (319)

Spin-helical transport in normal and superconducting topological insulators

, 2012
In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface.
Abanin, Adroguer, Adroguer, Akhmerov, Akhmerov, Akkermans, Alpichshev, Altshuler, Altshuler, Analytis, Ando, Badiane, Bardarson, Beenakker, Bergmann, Beri, Bernevig, Berry, Beugeling, Beugeling, Black-Schaffer, Brüne, Brüne, Brüne, Budich, Burkov, Butch, Bychkov, Büttner, Castro Neto, Cha, Chang, Checkelsky, Checkelsky, Chen, Chen, Chen, Chen, Chen, Chu, Chu, Crepin, Culcer, Culcer, Culcer, Culcer, De Martino, Dora, Dora, Eremeev, Eremeev, Essin, Eto, Fagas, Fu, Fu, Fu, Fu, Fu, Garate, Goldman, Golub, Gorkov, Grajcar, Groth, Guigou, Guigou, Gusev, Gusev, Halperin, Hancock, Hasan, He, Hikami, Hsieh, Hsieh, Ikonnikov, Iordanskii, Ioselevich, Ito, Ivanov, Jiang, Jin, Kane, Khaymovich, Kim, Kitaev, Knap, Knez, Kopnin, Koren, Krueckl, Kuroda, Kuroda, Kuroda, Kuzmenko, Kvon, Kwon, König, König, Lababidi, LaForge, Langenberg, Law, Li, Lin, Linder, Liu, Liu, Liu, Liu, Lu, Lu, MacDonald, Maciejko, Maciejko, McCann, McMillan, Meidan, Meidan, Michetti, Michetti, Minkov, Mondal, Moore, Mourik, Murakami, Nayak, Nestoklon, Nielsen, Novik, Olshanetsky, Oreg, Ostrovsky, Ostrovsky, Pankratov, Papic, Pesin, Potter, Qi, Qi, Qi, Raichev, Read, Reinthaler, Roth, Rothe, Rüegg, Sacepe, Santos, Sato, Sau, Scharf, Schmidt, Schmidt, Schmidt, Shevtsov, Shuvaev, Souma, Stanescu, Steinberg, Ström, Sushkov, Suzuura, Tahir, Takagaki, Takagaki, Takagaki, Tanaka, Tanaka, Taskin, Taskin, Tewari, Tian, Tilahun, Timm, Tkachov, Tkachov, Tkachov, Tkachov, Tkachov, Tkachov, Tkachov, Tkachov, Tkachov, Tse, Tse, Tse, Tserkovnyak, Tudorovskiy, Vafek, Valdes Aguilar, Veldhorst, Virtanen, Virtanen, Volkov, Walter, Wang, Wang, Wang, Weeks, Williams, Wu, Xia, Yan, Yang, Yanson, Yazyev, Yokoyama, Zazunov, Zhang, Zhang, Zhou, Zhu, Zou, Zutic, Zyuzin   +216 more
core   +1 more source

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling [PDF]

, 2006
We show that the spin Hall conductivity in insulators is related with a magnetic susceptibility representing the strength of the spin-orbit coupling.
H. Fukuyama, Shuichi Murakami, V. B. Sandomirskii, V. B. Sandomirskii, V. N. Lutskii, V. N. Lutskii, W. S. Boyle   +6 more
core   +1 more source

Single Pair of Weyl Points Evolve From Spin Group‐Protected Nodal Line in Half‐Metallic Ferromagnet V3S4

Advanced Functional Materials, EarlyView.
A spin group (SG)‐based mechanism is proposed to realize a single pair of Weyl points. PT‐symmetric nodal lines (NLs) persist under T‐breaking, protected by the combination of SG and P symmetry. When considering spin‐orbit coupling, the SG‐protected NL will split into Weyl points, which will also induce anomalous transport phenomena arising from ...
Shifeng Qian, Yao Zhang, Xiaowei Sheng, Xiuxian Yang, Gang Zhang, Junfeng Gao, Xiaotian Wang   +6 more
wiley   +1 more source

Quantized spin Hall conductance in a magnetically doped two dimensional topological insulator

Nature Communications, 2021
The quantum spin Hall effect is expected not to survive the presence of magnetic impurities. Here, authors report full quantization at very low temperatures in HgTe quantum wells alloyed with a few percent of magnetic Mn atoms, due to Kondo screening.
Saquib Shamim, Wouter Beugeling, Pragya Shekhar, Kalle Bendias, Lukas Lunczer, Johannes Kleinlein, Hartmut Buhmann, Laurens W. Molenkamp   +7 more
doaj   +1 more source

Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

, 2004
With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron ...
A. G. M. Jansen, A. M. M. Pruisken, A. P. Smith, B. L. Al’tshuler, B. P. Dolan, C. H. Lee, D. A. Knyazev, D. E. Khmel’nitskii, D. E. Khmel’nitskii, D. E. Khmel’nitskii, D. E. Khmel’nitskiĭ, D. Shahar, K. Eberl, M. M. Fogler, M. Weiss, S. S. Murzin, T. Ando   +16 more
core   +1 more source

Spin-Hall effect in a [110] quantum well [PDF]

, 2006
A self-consistent treatment of the spin-Hall effect requires consideration of the spin-orbit coupling and electron-impurity scattering on equal footing. This is done here for the experimentally relevant case of a [110] GaAs quantum well [Sih {\it et al.},
E. M. Hankiewicz, G. Vignale, M. E. Flatté, N. F. Mott, P. Noziéres   +4 more
core   +2 more sources

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source

Elementary theory of quantum Hall effect [PDF]

Maejo International Journal of Science and Technology, 2008
The Hall effect is the generation of a current perpendicular to both the direction of the applied electric as well as magnetic field in a metal or in a semiconductor. It is used to determine the concentration of electrons.
Keshav N. Shrivastava
doaj  

Topological and magnetic phase transition in silicene-like zigzag nanoribbons

New Journal of Physics, 2018
Spin–orbital interactions (SOI) in silicene results in the quantum-spin-Hall effect, while the Hubbard-induced Coulomb interaction in zigzag nanoribbons often generates a band gap with the anti-ferromagnetic (AF) spin orders on two edges.
Xiao Long Lü, Yang Xie, Hang Xie
doaj   +1 more source

Valley-dependent odd quantum Hall states induced by side potential in graphene

Results in Physics, 2023
The valley degree of freedom endows graphene with many novel physical properties. In this paper, we propose a new method to construct valley-related quantum Hall states using side potentials.
Zheng-Fang Liu, Yu Chen, Qing-Ping Wu, Xian-Bo Xiao   +3 more
doaj   +1 more source