Results 71 to 80 of about 128,254 (319)

Paired States in the Even Integer Quantum Hall Effect

, 1995
We argue that a new type of quantum Hall state requiring non-perturbative Landau level mixing arises at low electron density. In these states, up and down spin electrons pair to form spinless bosons that condense into a bosonic quantum Hall state.
A. L. Fetter, A. Lopez, A. M. Tikofsky, B. I. Halperin, C. L. Kane, C. L. Kane, D. H. Lee, D. Shahar, G. Moore, H. W. Jiang, I. Herbut, L. W. Wong, M. Greiter, M. Greiter, M. J. Rice, N. E. Bonesteel, R. J. F. Hughes, R. Prange, S. A. Kivelson, S. C. Zhang, S. C. Zhang, S. E. Barrett, S. Kivelson, S. L. Sondhi, T. Wang, X. G. Wen, X. Wen   +26 more
core   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

Integer spin Hall effect in ballistic quantum wires [PDF]

Physical Review B, 2006
7 pages, 5 figures, accepted for publication in Phys. Rev.
Bellucci, S., Onorato, P.
openaire   +3 more sources

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

First-Principles Study on the High Spin-Polarized Ferromagnetic Semiconductor of Vanadium-Nitride Monolayer and Its Heterostructures

Molecules
The newly discovered 2D spin-gapless magnetic materials, which provide new opportunities for combining spin polarization and the quantum anomalous Hall effect, provide a new method for the design and application of memory and nanoscale devices.
Guiyuan Hua, Xuming Wu, Xujin Ge, Tianhang Zhou, Zhibin Shao   +4 more
doaj   +1 more source

Theory of spin-Hall transport of heavy holes in semiconductor quantum wells

, 2006
Based on a proper definition of the spin current, we investigate the spin-Hall effect of heavy holes in narrow quantum wells in the presence of Rashba spin-orbit coupling by using a spin-density matrix approach.
Bleibaum O Wachsmuth S, Bryksin V V, Bryksin V V, Bryksin V V, Bryksin V V, Gerchikov L G, P Kleinert, V V Bryksin   +7 more
core   +2 more sources

Anisotropic intrinsic spin Hall effect in quantum wires [PDF]

Journal of Physics: Condensed Matter, 2011
We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the ...
Cummings, A. W., Akis, R., Ferry, D. K.
openaire   +3 more sources

Low‐Symmetry Weyl Semimetals: A Path to Ideal Topological States

Advanced Functional Materials, EarlyView.
This study presents a theoretical framework for realizing ideal Weyl semimetals, where Weyl nodes are well‐isolated at the Fermi level. The approach is exemplified in the low‐symmetry material Cu2SnSe3, which exhibits tunable topological phases, current‐induced orbital magnetization, and a strong circular photogalvanic effect, making it a promising ...
Darius‐Alexandru Deaconu, Varun Shah, Rodion Vladimirovich Belosludov, Mohammad Saeed Bahramy   +3 more
wiley   +1 more source

Curvature-induced quantum spin-Hall effect on a Möbius strip [PDF]

, 2022
Kyriakos Flouris, Miller Mendoza Jimenez, Hans J. Herrmann   +2 more
openalex   +1 more source

Time-Reversal-Symmetry-Broken Quantum Spin Hall Effect

Physical Review Letters, 2011
Quantum spin Hall (QSH) state of matter is usually considered to be protected by time-reversal (TR) symmetry. We investigate the fate of the QSH effect in the presence of the Rashba spin-orbit coupling and an exchange field, which break both inversion and TR symmetries. It is found that the QSH state characterized by nonzero spin Chern numbers $C_{\pm}=
Yang, Yunyou, Xu, Zhong, Sheng, L., Wang, Baigeng, Xing, D. Y., Sheng, D. N.   +5 more
openaire   +4 more sources