Results 131 to 140 of about 1,395,355 (286)
Al1‐xScxN‐Based Ferroelectric Domain‐Wall Memristors
(a) Conductive atomic force microscopy (CAFM) image of the initial state bidomain structure of the Al0.85Sc0.15N (a) showing an enhanced conductivity of the head‐to‐head domain boundary. (b) CAFM image of the same area after application of several −65 V, 1 s voltage pulses showing lower conductivity of the generated tail‐to‐tail domain walls.
Haidong Lu +11 more
wiley +1 more source
By a simple anti‐Galvanic reaction, up to six copper atoms could be preferably doped into the Ag2(SR)5 staple motifs and Ag20 dodecahedral shell of an atomically precise Ag44(SR)30 nanocluster. When anatase TiO2 is used as substrate, the (AgCu)44/TiO2 photocatalyst exhibited much improved activity in photocatalytic CO2 reduction compared to Ag44/TiO2 ...
Ye Liu +5 more
wiley +1 more source
Optimized time-dependent perturbation theory for pulse-driven quantum dynamics in atomic or molecular systems [PDF]
D. Daems +4 more
openalex +1 more source
Non-standard quantum algebras and finite dimensional $\mathcal{PT}$-symmetric systems [PDF]
Ángel Ballesteros +2 more
openalex +1 more source
Biopolymers are sustainable, biodegradable alternatives to petroleum‐based plastics for food packaging. Its adoption is often limited by poor mechanical strength, barrier properties, and improved thermal stability through the incorporation of nanofillers.
Himakshi Baishya +2 more
wiley +1 more source
Theoretical and experimental investigations of Coulomb blockade in coupled quantum dot systems [PDF]
Franz Kaiser +9 more
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Hollow poly(heptazine imide) spheres are prepared through a novel approach that integrates hard templating with ionothermal synthesis. This method enables precise control over surface area, pore volume, hydrophilicity, light absorption, band position, and metal composition. These tunable properties facilitate the customized design of semiconductors for
Lingli Ni +10 more
wiley +1 more source
A New Memory Effect in Bulk Crystals of 1T‐TaS2
A new memory effect is discovered in 1T‐TaS₂, appearing as a temperature shift in the metal to insulator transition, coinciding with the recently reported ramp reversal memory. These findings imply that ramp reversal memory is an emergent phenomenon, likely to appear in many different systems that share a few basic properties, which are discussed in ...
Avital Fried +4 more
wiley +1 more source
The side‐chain configuration in the bay region of C‐shaped ortho‐benzodipyrrole‐based non‐fullerene acceptors plays a crucial role in their self‐assembly, single‐crystal structures, and optoelectronic properties. The closely correlated molecular structure and performance underscore the importance of minimizing A–A self‐aggregation and enhancing D–A ...
Yung‐Jing Xue +18 more
wiley +1 more source
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang +8 more
wiley +1 more source

