Results 121 to 130 of about 1,956,567 (332)
Lithium Intercalation in the Anisotropic Van Der Waals Semiconductor CrSBr
Advanced Functional Materials, EarlyView.We report the lithium intercalation in the layered van der Waals crystal CrSBr, revealing strongly anisotropic ion‐migration dynamics. Optical and electrical characterization of exfoliated CrSBr shows lithium diffusion coefficients that differ by more than an order of magnitude along a‐ and b‐directions, consistent with molecular dynamics simulations ...
Kseniia Mosina +13 more
wiley +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
Advanced Functional Materials, EarlyView.The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
Open-System Quantum Annealing in Mean-Field Models with Exponential Degeneracy*
Physical Review X, 2016 Real-life quantum computers are inevitably affected by intrinsic noise resulting in dissipative nonunitary dynamics realized by these devices. We consider an open-system quantum annealing algorithm optimized for such a realistic analog quantum device ...
Kostyantyn Kechedzhi +1 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske +4 more
wiley +1 more source
Ambipolar tunneling in near-surface quantum wells
, 1996 We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling currents for ...
Emiliani, Valentina +2 more
core +2 more sources
Spin texture of Bi2Se3 thin films in the quantum tunneling limit.
Physical Review Letters, 2014 By means of spin- and angle-resolved photoelectron spectroscopy we studied the spin structure of thin films of the topological insulator Bi2Se3 grown on InP(111).
G. Landolt +12 more
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda +11 more
wiley +1 more source
Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots
New Journal of Physics, 2014 We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling ...
Chen Wang, Jie Ren, Jianshu Cao
doaj +1 more source
Enhancing Third- and Fifth-Order Nonlinearity via Tunneling in Multiple Quantum Dots
Nanomaterials, 2019 The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum ...
Si-Cong Tian +9 more
doaj +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source