Results 121 to 130 of about 1,987,784 (294)
Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct ...
Hakim, M. M. A.
core
Spin texture of Bi2Se3 thin films in the quantum tunneling limit.
By means of spin- and angle-resolved photoelectron spectroscopy we studied the spin structure of thin films of the topological insulator Bi2Se3 grown on InP(111).
G. Landolt +12 more
semanticscholar +1 more source
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan +9 more
wiley +1 more source
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu +8 more
wiley +1 more source
Long-range quantum tunneling via matter waves
Quantum tunneling is a quantum phenomenon in which a microscopic object crosses through a potential barrier even if its energy cannot overcome the barrier. A general belief is that tunneling occurs only when the barrier width is comparable to, or smaller
Yuan-Xing Yang, Si-Yuan Bai, Jun-Hong An
doaj +1 more source
Open-System Quantum Annealing in Mean-Field Models with Exponential Degeneracy*
Real-life quantum computers are inevitably affected by intrinsic noise resulting in dissipative nonunitary dynamics realized by these devices. We consider an open-system quantum annealing algorithm optimized for such a realistic analog quantum device ...
Kostyantyn Kechedzhi +1 more
doaj +1 more source
Tunneling Time in Quantum Mechanics
: The longstanding issue of how much time it takes a particle to tunnel through quantum barriers is discussed; in particular, the phenomenon known as the Hartman effect is reviewed.
core
Enhancing student learning of two-level quantum systems with interactive simulations
Date of Acceptance: 14/02/2015The QuVis Quantum Mechanics Visualization project aims to address challenges of quantum mechanics instruction through the development of interactive simulations for the learning and teaching of quantum mechanics.
Kohnle, Antje +9 more
core +1 more source
Magnetic Textiles: A Review of Materials, Fabrication, Properties, and Applications
Magnetic textiles (M‐textiles) are emerging as a programmable materials platform that merges magnetic matter with hierarchical textile structures. This article consolidates magnetic material classes, textile architectures, and fabrication and magnetization strategies, revealing structure–property–function relationships that govern magneto‐mechanical ...
Li Ke +3 more
wiley +1 more source
Quantum tunneling in magnetic tunneling junctions
This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the ...
Evgeni Cruz de Gracia +4 more
doaj

