Results 181 to 190 of about 39,774 (284)

Emergence of Double‐Dome Superconductivity in the Pressurized Dirac Semimetal BaMg2Bi2

Advanced Electronic Materials, EarlyView.
ABSTRACT Dirac semimetal BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ is reported to be a unique topological material that manifests surface superconductivity that coexists with bulk band topology at ambient pressure. Here, we present a comprehensive investigation of high‐pressure superconducting properties in BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ single ...
Qi Wang, Juefei Wu, Cuiying Pei, Yi Zhao, Yiyan Wang, Yanpeng Qi   +5 more
wiley   +1 more source

Quantum biology: From mechanisms to medicine. [PDF]

Clin Transl Med
Sung JY, Cheong JH.
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

High-fidelity collisional quantum gates with fermionic atoms. [PDF]

Nature
Bojović P, Hilker T, Wang S, Obermeyer J, Barendregt M, Tell D, Chalopin T, Preiss PM, Bloch I, Franz T.   +9 more
europepmc   +1 more source

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

Advanced Electronic Materials, EarlyView.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang, Jianbi Le, Rong Chen, Zhixian Lin, Xiongtu Zhou, Yongai Zhang, Chaoxing Wu   +6 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Large-scale analogue quantum simulation using atom dot arrays. [PDF]

Nature
Donnelly MB, Chung Y, Garreis R, Plugge S, Pye D, Kiczynski M, Támara-Isaza J, Munia MM, Sutherland S, Voisin B, Kranz L, Hsueh YL, Huq AMS, Myers CR, Rahman R, Keizer JG, Gorman SK, Simmons MY.   +17 more
europepmc   +1 more source