Results 211 to 220 of about 1,040,020 (296)

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

High-fidelity collisional quantum gates with fermionic atoms. [PDF]

open access: yesNature
Bojović P   +9 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

open access: yesAdvanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang   +6 more
wiley   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee   +7 more
wiley   +1 more source

Mn‐Substituted Topological Phase Transition in Topological Insulator Pt2HgSe3

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Topological materials have gained a significant interest in recent years due to their unique features, leading to topological insulators (TI), Dirac or Weyl semimetals, etc. The layered material Pt2HgSe3${\rm Pt}_2{\rm HgSe}_3$ is found to be a dual TI characterized by significant spin–orbit coupling and band inversion.
Deergh Bahadur Shahi   +4 more
wiley   +1 more source

Crystal-Field Properties of Pentalene Ligands in Erbium(III) Sandwich Complexes. [PDF]

open access: yesOrganometallics
De S   +4 more
europepmc   +1 more source

Macroscopic quantum tunnelling in spin filter ferromagnetic Josephson junctions. [PDF]

open access: yesNat Commun, 2015
Massarotti D   +6 more
europepmc   +1 more source

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