Results 251 to 260 of about 1,855,980 (368)

Probing Ultrastrong Through‐Space Electronic Coupling in Donor‐Acceptor Systems at the Single‐Molecule Level

Advanced Science, EarlyView.
A series of through‐space coupled donor‐acceptor (D–A) molecules is sandwiched between two electrodes to determine their single‐molecule conductance. As the D–A interaction weakens, single‐molecule conductance reduces while Flicker Noise PSD n‐value increases (coupling strength decreases).
Xin Wang, Dan Yang, Jiazheng Diao, Jens Ulstrup, Chengyang Zhang, Florian Auras, Qiang Fu, Jinlong Yang, Linsong Cui, Yueqi Li, Jinghong Li   +10 more
wiley   +1 more source

Charge transfer dynamics in noble gas endofullerenes: intra- and extramolecular tunnelling. [PDF]

Nanoscale Adv
Sufyan A, James T, Fields C, Naseri S, Junqueira F, Alonso-Perez S, Bloodworth S, Hoffman G, Walkey MC, Marsden ES, Whitby RJ, Wang Y, Duncan DA, Lee TL, O'Shea JN, Larsson JA, Kiraly B, Moriarty P.   +17 more
europepmc   +1 more source

Spectroscopic Evidence of Edge‐Localized States in an Antiferromagnet Topological Insulator NdBi

Advanced Science, EarlyView.
Using spin‐polarized scanning tunneling microscopy (STM) in conjunction with quasiparticle interference, we successfully identify distinct signatures of the ferromagnetic and antiferromagnetic terminations in NdBi, a rare‐earth monopnictide exhibiting non‐trivial topology and magnetism. We demonstrate that step edges on ferromagnetic surfaces host well‐
Avior Almoalem, Rebecca Chan, Brinda Kuthanazhi, Juan Schmidt, Jose A. Moreno, Hermann Suderow, Paul Canfield, Taylor L. Hughes, Vidya Madhavan   +8 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

An electrically controlled single-molecule spin switch. [PDF]

Nat Commun
Huang W, Au-Yeung KH, Greule P, Stark M, Sürgers C, Wernsdorfer W, Robles R, Lorente N, Willke P.   +8 more
europepmc   +1 more source

Role of scaling dimensions in generalized noises in fractional quantum Hall tunneling due to a temperature bias [PDF]

Matteo Acciai, Gu Zhang, Christian Spånslätt   +2 more
openalex   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, EarlyView.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Exploring quantum tunneling in heavy atom reactions using a rigorous theoretical approach to the dynamics: formation of NO + O from the N + O₂ atmospheric reaction

Fabrizio Esposito, Pablo Gamallo, Miguel González, Carlo Petrongolo   +3 more
openalex   +2 more sources

MIM‐Diode‐Like Rectification in Lateral 1T/1H/1T‐MoS2 Homojunctions via Interfacial Dipole Engineering

Advanced Electronic Materials, EarlyView.
The metallic 1T and semiconducting 1H phases of MoS2 enable phase‐engineered 1T/1H/1T homojunctions that exhibit MIM‐diode‐like rectification without dissimilar electrodes. Asymmetric 1T/1H interfaces induce interface dipoles and a built‐in potential drop across the 1H barrier, creating a trapezoidal tunnel barrier at zero bias and yielding diode‐like ...
Elias Eckmann, Ersoy Şaşıoğlu, Nicki F. Hinsche, Ingrid Mertig   +3 more
wiley   +1 more source

High-TMR iron-free double-barrier MTJs with MoTe₂ spacing for label-free magnetic biosensors. [PDF]

RSC Adv
Azargoshasb T, Kamkar P, Heidari H.
europepmc   +1 more source