Results 261 to 270 of about 1,855,980 (368)

Metal–Insulator–Insulator–Metal (MIIM) Ag/SnO2/Al2O3/Ag Diodes Fabricated by Ultraprecise Dispensing and Atomic Layer Deposition

Advanced Electronic Materials, EarlyView.
This study introduces a new method for fabricating MIIM diodes using ultra‐precise dispensing printing techniques combined with ALD. Thus, it provides a practical alternative to traditional lithography. The fabricated diode, with a contact area of 5.4 µm × 4.0 µm exhibits a tunneling current in the microampere range, a zero‐bias responsivity of −1.31 A/
Aboubacar Savadogo, Klaus Huska, Rohit D. Chavan, Thomas Nyachoti Nyangonda, Jan Feßler, Bernard Odhiambo Aduda, Ulrich Wilhelm Paetzold, Uli Lemmer, Mohamed Hussein   +8 more
wiley   +1 more source

Energy-speed relationship of quantum particles challenges Bohmian mechanics. [PDF]

Nature
Sharoglazova V, Puplauskis M, Mattschas C, Toebes C, Klaers J.   +4 more
europepmc   +1 more source

Resonant tunneling of electrons in quantum wires

, 2010
I. V. Krive, A. Palevski, R. I. Shekhter, M. Jonson   +3 more
openalex   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, EarlyView.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source

Tunneling in multi-site mesoscopic quantum Hall circuits [PDF]

D. B. Karki
openalex   +1 more source

Quantum Tunneling Modulated by Local Temporal Field Stiffness: WKB Predictions and Control"

Anwar, Morgan
openalex   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

A neutral-atom Hubbard quantum simulator in the cryogenic regime. [PDF]

Nature
Xu M, Kendrick LH, Kale A, Gang Y, Feng C, Zhang S, Young AW, Lebrat M, Greiner M.   +8 more
europepmc   +1 more source

Quantum Phase Slip as a Dual Process to Josephson Tunneling

, 2019
K. Yu. Arutyunov, J. S. Lehtinen
openalex   +1 more source