Results 171 to 180 of about 1,513,497 (299)

Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6

open access: yesAdvanced Functional Materials, EarlyView.
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl   +20 more
wiley   +1 more source

Period-doubling in the phase dynamics of a shunted HgTe quantum well Josephson junction. [PDF]

open access: yesNat Commun
Liu W   +9 more
europepmc   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

open access: yesAdvanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda   +11 more
wiley   +1 more source

Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry. [PDF]

open access: yesMicromachines (Basel)
Špokas A   +11 more
europepmc   +1 more source

Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device. [PDF]

open access: yesACS Appl Mater Interfaces, 2023
Corley-Wiciak C   +16 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy. [PDF]

open access: yesCryst Growth Des
Zscherp MF   +9 more
europepmc   +1 more source

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