Spatially structured multi-wave-mixing induced nonlinear absorption and gain in a semiconductor quantum well. [PDF]
Panchadhyayee P, Dutta BK.
europepmc +1 more source
Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl +20 more
wiley +1 more source
Period-doubling in the phase dynamics of a shunted HgTe quantum well Josephson junction. [PDF]
Liu W +9 more
europepmc +1 more source
Squeezed vacuum interaction with an optomechanical cavity containing a quantum well. [PDF]
Jabri H, Eleuch H.
europepmc +1 more source
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda +11 more
wiley +1 more source
Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry. [PDF]
Špokas A +11 more
europepmc +1 more source
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device. [PDF]
Corley-Wiciak C +16 more
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy. [PDF]
Zscherp MF +9 more
europepmc +1 more source
A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells. [PDF]
Liu W, Liu Z, Zhao H, Gao J.
europepmc +1 more source

