Results 251 to 260 of about 1,513,497 (299)
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Electron waveguiding in quantum wells, voltage- induced quantum wells, and quantum barriers
Optical Society of America Annual Meeting, 1991Recent experiments have produced ballistic electron transport over micron lengths in semiconductor 2-D electron gas (2DEG) systems. This has made possible the demonstration of electron devices that exhibit impressive optical like behavior.1-3 In these devices, the quantum well at the 2DEG interface acts as a slab waveguide for ballistic electron waves.
D. W. Wilson +2 more
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1991
In all of the devices discussed in previous chapters the dimensions of device structures were large compared to the wavelength of electrons in the device. When the dimensions of the structure are reduced to the point at which they are approaching the same order of magnitude as the electron wavelength some unique properties are observed.
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In all of the devices discussed in previous chapters the dimensions of device structures were large compared to the wavelength of electrons in the device. When the dimensions of the structure are reduced to the point at which they are approaching the same order of magnitude as the electron wavelength some unique properties are observed.
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Applied Physics Letters, 1987
Surface quantum wells of InP have been grown, by organometallic vapor phase epitaxy, on top of graded GaxIn1−xP epitaxial layers. The surface quantum well is confined on one side by vacuum, and on the other side by the graded GaxIn1−xP. Photoluminescence measurements show two transitions for electron-hole recombination within the surface quantum well ...
R. M. Cohen, M. Kitamura, Z. M. Fang
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Surface quantum wells of InP have been grown, by organometallic vapor phase epitaxy, on top of graded GaxIn1−xP epitaxial layers. The surface quantum well is confined on one side by vacuum, and on the other side by the graded GaxIn1−xP. Photoluminescence measurements show two transitions for electron-hole recombination within the surface quantum well ...
R. M. Cohen, M. Kitamura, Z. M. Fang
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Europhysics Letters (EPL), 1992
We show that forming linear sequences of quantum wells of two different types allows for a rich new variety in energy spectra and density of states for nanostructures. In the case of a one-dimensional periodic array such as a string of dots of two kinds, the phase diagram exhibits a new kind of criticality, in the sense that there are conducting phases
CLARO, F, MEDINA, R
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We show that forming linear sequences of quantum wells of two different types allows for a rich new variety in energy spectra and density of states for nanostructures. In the case of a one-dimensional periodic array such as a string of dots of two kinds, the phase diagram exhibits a new kind of criticality, in the sense that there are conducting phases
CLARO, F, MEDINA, R
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1990
Abstract : During the first year of the program, basic materials growth experiments were carried out in order to develop the necessary capability of the growth of quantum well lasers by Atmospheric Pressure MOVPE (AP-MOVPE). In the latter part of the program, this technology was transferred to a Low Pressure MOVPE (LP-MOVPE) reactor which demonstrated ...
D. J. Robbins +2 more
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Abstract : During the first year of the program, basic materials growth experiments were carried out in order to develop the necessary capability of the growth of quantum well lasers by Atmospheric Pressure MOVPE (AP-MOVPE). In the latter part of the program, this technology was transferred to a Low Pressure MOVPE (LP-MOVPE) reactor which demonstrated ...
D. J. Robbins +2 more
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Journal of Physics: Condensed Matter, 1999
Magnetic properties of materials can be tailored in nanostructures, such as thin films, wires and dots. This article gives an overview of what is known about the electronic states that are relevant for magnetic phenomena, such as oscillatory coupling, giant magnetoresistance (GMR) and spin-polarized tunnelling.
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Magnetic properties of materials can be tailored in nanostructures, such as thin films, wires and dots. This article gives an overview of what is known about the electronic states that are relevant for magnetic phenomena, such as oscillatory coupling, giant magnetoresistance (GMR) and spin-polarized tunnelling.
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2014
This chapter explains the reason and the mechanism of excellent characteristics in the QW-LDs, such as a low threshold current, high differential quantum efficiency, high-speed modulation, low chirping, and narrow spectral linewidth. To achieve these excellent characteristics, QW-LDs have to overcome small optical confinement factors for the active ...
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This chapter explains the reason and the mechanism of excellent characteristics in the QW-LDs, such as a low threshold current, high differential quantum efficiency, high-speed modulation, low chirping, and narrow spectral linewidth. To achieve these excellent characteristics, QW-LDs have to overcome small optical confinement factors for the active ...
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Chinese Physics Letters, 1999
A quantum well controller (QWC) consisting of a direct-gap/indirect-gap quantum well and a doping interface is proposed to control the dynamic operation of the Gunn active layer. Through the Monte Carlo simulation a new relaxation mode for this new device is found. The oscillation and amplification behavior of the Gunn active layer under the control of
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A quantum well controller (QWC) consisting of a direct-gap/indirect-gap quantum well and a doping interface is proposed to control the dynamic operation of the Gunn active layer. Through the Monte Carlo simulation a new relaxation mode for this new device is found. The oscillation and amplification behavior of the Gunn active layer under the control of
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1992
The ability to fabricate single quantum well (SQW) and multiple quantum well (MQW) devices has given rise to new optical and electronic devices as well as to new physical phenomena [1]. Since the first investigation of optical properties in quantum wells by Dingle et al., [2] the application of quantum well structures to semiconductor laser diodes [3],
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The ability to fabricate single quantum well (SQW) and multiple quantum well (MQW) devices has given rise to new optical and electronic devices as well as to new physical phenomena [1]. Since the first investigation of optical properties in quantum wells by Dingle et al., [2] the application of quantum well structures to semiconductor laser diodes [3],
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