Results 241 to 250 of about 308,563 (288)

Recent progress in aluminum nitride for piezoelectric MEMS mirror applications: enhancements with scandium doping. [PDF]

Microsyst Nanoeng
Jung Y, Lee D, Kim J.
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Influence of Increased TaNbV on the Microstructure, Mechanical Properties, and Energy Release Characteristics of High-Entropy Alloy HfZrTi(TaNbV)_x. [PDF]

Materials (Basel)
Chen C, Ma Y, Wei M, Gai X, Peng Y, Mei Y, Liu X, Zhang K, Li J.   +8 more
europepmc   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Graphene Nanofiller Type Matters: Comparative Analysis of Static and Fatigue Delamination Resistance in Modified Carbon Fiber Composites. [PDF]

Polymers (Basel)
Zafeiropoulou K, Kostagiannakopoulou C, Sotiriadis G, Kostopoulos V.   +3 more
europepmc   +1 more source

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

Advanced Electronic Materials, EarlyView.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie, Lara Franchin, Ludovica Pradetto Battel, Stefano Bonaldo, Alessandro Paccagnella, Biagio di Vizio, Stefano Agnoli, Rafael C. Hensel, Antonio Gaetano Ricciardulli, Simone Battiston, Mauro Sambi, Francesco Sedona, Paolo Samorì, Stefano Casalini   +13 more
wiley   +1 more source

Adaptive Twisting Metamaterials. [PDF]

Adv Mater
Utzeri M, Gatto ML, Mancini E, Orlandi D, Cortis D, Sasso M, Kumar S.   +6 more
europepmc   +1 more source

In-Plane Mechanical Behavior Design of a Locally Rib-Reinforced Rotating Hexagonal Honeycomb. [PDF]

Biomimetics (Basel)
Xie J, Huang J, Deng X.
europepmc   +1 more source

Quantum vibrational spectroscopy with classical trajectories. [PDF]

Chem Sci
Conte R, Aieta C, Ceotto M.
europepmc   +1 more source

Dynamic Compressive Behavior of a Novel Bioinspired Gradient Negative Poisson's Ratio Sign-Switching Metamaterial Made of Thermoplastic Polyurethane. [PDF]

Polymers (Basel)
Guan Y, Luo X, Cao W, Du X, Du M, Zhou Z, Cao X.   +6 more
europepmc   +1 more source