Region of residence, exposure to the media, and awareness of sexually transmitted infections among women in Ghana. [PDF]
Boakye AE, Tekpertey R, Mensah P.
europepmc +1 more source
Recent Advances in Programmable Metasurfaces and Meta‐Devices
Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao +4 more
wiley +1 more source
Erratum to: Multi-site retrospective analysis of diffusion and perfusion magnetic resonance imaging correlates to glioma characteristics derived from radio-pathomic map. [PDF]
europepmc +1 more source
Topological Materials and Related Applications
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Achieving Ultra-Reliable Low Latency Communication in 5G and Beyond. [PDF]
Bajracharya R, Shrestha R.
europepmc +1 more source
SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel +6 more
wiley +1 more source
A simple button-to-button fixation for chronic distal radio-ulnar junction disruption: a case report and literature review. [PDF]
Deviandri R +5 more
europepmc +1 more source
Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe +11 more
wiley +1 more source
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley +1 more source

