Results 221 to 230 of about 364,602 (244)
Recent Advances in Programmable Metasurfaces and Meta‐Devices
Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao +4 more
wiley +1 more source
Cervical cancer information access and dissemination strategies among rural Kenyan women: A mixed methods study. [PDF]
Chepkorir J +12 more
europepmc +1 more source
La ràdio publicitària : el pes de l'immobilisme [PDF]
Barbeito Veloso, Ma. Luz, Fajula, Anna
core +1 more source
Topological Materials and Related Applications
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Design and Application of a Mobile Ultra-Audio Frequency Electromagnetic Measurement System. [PDF]
Ruan H +5 more
europepmc +1 more source
SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel +6 more
wiley +1 more source
Modelling the impact of energetic electrons on electron-acoustic instabilities and HF/UHF wave propagation in the ionospheric-like plasmas. [PDF]
Ebadi D, Barzegar S.
europepmc +1 more source
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley +1 more source

