Results 221 to 230 of about 364,602 (244)

On és i cap on va el sector radiofònic [PDF]

open access: yes, 1996
Jiménez, Miquel Angel
core  

Recent Advances in Programmable Metasurfaces and Meta‐Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao   +4 more
wiley   +1 more source

Cervical cancer information access and dissemination strategies among rural Kenyan women: A mixed methods study. [PDF]

open access: yesJ Public Health Afr
Chepkorir J   +12 more
europepmc   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

La televisió de Valls. Passat, present i futur? [PDF]

open access: yes, 2005
Campo Lorente, Esther del
core  

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

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