Results 291 to 300 of about 13,039 (328)
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Radiation hardening in vanadium
Journal of Nuclear Materials, 1970Abstract The effects of neutron irradiation on the tensile properties of 99.9 wt % pure vanadium are investigated in the fluence range 8 × 10 17 to 4 × 10 19 n / cm −2 ( E >1 MeV ). Vanadium is shown to display typical radiation and anneal hardening like other bodycentered cubic (bcc) transition metals.
G.R. Smolik, C.W. Chen
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Radiation-Hardened Microelectronics
AT&T Technical Journal, 1991Many nuclear power, defense, and space applications require radiation-hardened integrated circuits. In 1986, Sandia's expertise in microelectronics radiation hardening was combined with ATT the new process is running at AT&T's Allentown, Pennsylvania, MOS V production facility, and the technology has been transferred to Sandia's Microelectronics ...
James L. Jorgensen, David S. Yaney
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IEEE Transactions on Nuclear Science, 1975
This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g.
K. G. Aubuchon, E. Harari
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This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g.
K. G. Aubuchon, E. Harari
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International Journal of Electronics, 2008
Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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CNTFET based radiation hardened latch
Australian Journal of Electrical and Electronics Engineering, 2021In this paper, a carbon nanotube field effect transistor (CNTFET) based single event upset (SEU) tolerant latch is proposed.
Shazia Shakeel, Naushad Alam
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2015
The major work introduced in this book is to develop a megagray-radiation-tolerant ps-resolution time-to-digital converter (TDC) for a light detection and ranging (LIDAR) application. In this chapter, major radiation effects in complementary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) are introduced. The total ionizing dose (TID) effects
Ying Cao, Paul Leroux, Michiel Steyaert
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The major work introduced in this book is to develop a megagray-radiation-tolerant ps-resolution time-to-digital converter (TDC) for a light detection and ranging (LIDAR) application. In this chapter, major radiation effects in complementary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) are introduced. The total ionizing dose (TID) effects
Ying Cao, Paul Leroux, Michiel Steyaert
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Transistor sizing for radiation hardening
2004 IEEE International Reliability Physics Symposium. Proceedings, 2004This paper presents an efficient and accurate numerical analysis technique to simulate single event upsets (SEUs) in logic circuits. Experimental results that show the method is accurate to within 10% of the results obtained using SPICE are provided.
null Quming Zhou, K. Mohanram
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A1Gaas/Gaas Radiation Hardened Photodiodes
SPIE Proceedings, 1984We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy.
J . J. Wiczer +4 more
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Radiation Hardened Bandgap References
2015As a key component in the proposed multistage noise-shaping (MASH) \(\Delta\Sigma\) time-to-digital converter (TDC) system, the total ionizing dose (TID) radiation tolerance of the bandgap reference in deep-submicron -complementary metal–oxide–semiconductor (CMOS) technology is generally limited by the radiation-introduced leakage current in diodes. An
Ying Cao, Paul Leroux, Michiel Steyaert
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Radiation‐Hardened Optoelectronic Components
Aircraft Engineering and Aerospace Technology, 1992HONEYWELL has developed the world's first range of radiation‐hardened LEDs and photodiodes which operate effectively during and after radiation exposure. The components have many applications for position and object sensing in missiles, aircraft, spacecraft, nuclear installations and hard military environments, where standard components have been ...
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