Results 31 to 40 of about 307,616 (251)

Thermal effects on electron-phonon interaction in silicon nanostructures

, 2009
Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature.
A. K. Shukla, AG Cullis, AK Shukla, G Faraci, H Richter, HS Mavi, HS Mavi, HS Mavi, IH Campbell, J Niu, J Raptis, KW Adu, L Sirleto, M Balkanski, M Balkanski, M Becker, M Kroner, MJ Konstantinovic, P Mishra, R Jalilian, R Kumar, R Kumar, R Kumar, R Kumar, R Tsu, Rajesh Kumar, S Narasimhan, SB Concari, TR Hart, U Fano, Vivek Kumar   +30 more
core   +1 more source

Modified Confinement Model for Size Dependent Raman Shift and Linewidth of Silicon Nanocrystals

, 2009
A modified phonon confinement model considering the size distribution, an improved phonon dispersion curve and a confinement function is developed for the calculation of size dependent Raman spectra of the silicon (Si) nanocrystals.
Arora, Campbell, Cheng, Diéguez, Ehbrecht, Ehbrecht, Faraci, Li, Nilsson, Paillard, Parayanthal, Pennisi, Piscanec, Prafulla K. Jha, Richter, Sanjeev K. Gupta, Seto, Sirenko, Tubino, Xia, Zi, Zi   +21 more
core   +1 more source

Ultraviolet Raman Spectroscopy of Single and Multi-layer Graphene

, 2009
We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band intensity undergoes ...
Alexander A. Balandin, Baranov A. V., Calizo I., Cardona M., Guanxiong Liu, Igor Bejenari, Irene Calizo, Muhammad Rahman   +7 more
core   +1 more source

Theory of Raman Scattering from Orbital Excitations in Manganese Oxides [PDF]

, 2001
We present a theory of the Raman scattering from the orbital wave excitations in manganese oxides. Two excitation processes of the Raman scattering are proposed.
B. S. Shastry, E. Saitoh, F. Moussa, G. Khaliullin, G. Khaliullin, G. Matsumoto, I. Solovyev, J. B. Goodenough, J. C. Slater, J. F. Mitchell, J. Inoue, J. Kanamori, J. Rodriguez-Carvajal, J. van den Brink, K. Chahara, K. Hirota, L. F. Feiner, L. F. Feiner, M. Cyrot, M. N. Iliev, P. A. Fleury, R. J. Elliott, R. Maezono, R. von Helmolt, S. Ishihara, S. Ishihara, S. Ishihara, S. Ishihara, S. Ishihara, S. Maekawa, S. Okamoto, S. Okamoto, S. Okamoto, S. Okamoto, S. Satpathy, T. Arima, T. Arima, T. Saitoh, V. Perebeinos, W. E. Pickett, Y. Endoh, Y. Murakami, Y. Tokura, Y. Tokura   +43 more
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Anharmonic Raman spectra simulation of crystals from deep neural networks

AIP Advances, 2021
Raman spectroscopy is an effective tool to analyze the structures of various materials as it provides chemical and compositional information. However, the computation demands for Raman spectra are typically significant because quantum perturbation ...
Honghui Shang, Haidi Wang
doaj   +1 more source

Theoretical Raman fingerprints of $\alpha$-, $\beta$-, and $\gamma$-graphyne

, 2013
The novel graphene allotropes $\alpha$-, $\beta$-, and $\gamma$-graphyne derive from graphene by insertion of acetylenic groups. The three graphynes are the only members of the graphyne family with the same hexagonal symmetry as graphene itself, which ...
Lambin, Philippe, Popov, Valentin N.
core   +1 more source

Raman Scattering in Cuprate Superconductors

, 1997
A theory for electronic Raman scattering in the cuprate superconductors is presented with a specific emphasis on the polarization dependence of the spectra which can infer the symmetry of the energy gap.
Devereaux, T. P., Kampf, A. P.
core   +2 more sources

Raman Scattering versus Infrared Conductivity: Evidence for one-dimensional Conduction in La_{2-x}Sr_{x}CuO_{4}

, 2002
Raman and Infrared (IR) spectra of an underdoped La_{1.90}Sr_{0.10}CuO_{4} single crystal have been measured as a function of temperature. Both techniques provide unconventional low-energy spectra.
A. Bianconi, A. Lucarelli, A. Schwartz, A. Virosztek, A.G. Loeser, B. Dora, C.C. Homes, C.C. Tsuei, F. Venturini, G.V.M. Williams, J.G. Naeini, J.M. Tranquada, K. Takenaka, M. Dumm, M. Fujita, M. Opel, M. Ortolani, N. Kikugawa, P. Calvani, Q.-M. Zhang, R. Hackl, R.P. Sharma, R.P.S.M. Lobo, S. Lupi, S. Lupi, S. Lupi, S. Sugai, S. Tajima, T. Fujita, T. Noda, T. Osafune, T. Startseva, T. Startseva, T. Timusk, T. Tohyama, T.P. Devereaux, T.P. Devereaux, T.P. Devereaux, X.K. Chen, Y. Ando   +39 more
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Incorporation of H_2 in vitreous silica, qualitative and quantitative determination from Raman and infrared spectroscopy [PDF]

, 1998
Incorporation mechanisms of H_2 in silica glass were studied with Raman and infrared (IR) microspectroscopy. Hydrogenated samples were prepared at temperatures between 800 deg C and 955 deg C at 2 kbar total pressure.
Bény, Jean-Michel, Holtz, François, Schmidt, Burkhard C.   +2 more
core   +2 more sources

Anisotropic effects in the Raman scattering of Re-doped 2H-MoSe2 layered semiconductors

Results in Physics, 2017
We present the anisotropic Raman spectra of the Re-doped MoSe2 layered semiconductor with thicker edge plane grown by chemical vapor transport method.
Chia-Ti Wu, Sheng-Yao Hu, Kwong-Kau Tiong, Yueh-Chien Lee   +3 more
doaj   +1 more source