An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications. [PDF]
Roy A +9 more
europepmc +1 more source
ABSTRACT Background X‐linked adrenoleukodystrophy (X‐ALD) is a neurometabolic disorder caused by pathogenic variants in ABCD1, leading to slowly progressive spinal cord disease in nearly all affected men. Sensitive biomarkers to quantify disease severity and predict progression are needed for clinical care and trial design.
Eda G. Kabak +4 more
wiley +1 more source
A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities. [PDF]
Roy A +9 more
europepmc +1 more source
ABSTRACT Background Cognitive impairment is a common non‐motor symptom in Multiple Sclerosis (MS), negatively affecting autonomy and Quality of Life (QoL). Innovative rehabilitation strategies, such as semi‐immersive virtual reality (VR) and computerized cognitive training (CCT), may offer advantages over traditional cognitive rehabilitation (TCR ...
Maria Grazia Maggio +8 more
wiley +1 more source
Torquetenovirus Viremia Quantification Using Real-Time PCR Developed on a Fully Automated, Random-Access Platform. [PDF]
Spezia PG +12 more
europepmc +1 more source
ABSTRACT Background and Purpose White matter hyperintensities (WMH) are a core neuroimaging marker of cerebral small vessel disease (CSVD). Sleep apnoea (SA) is a recognized vascular risk factor, but its associations with regional WMH burden, short‐interval WMH change and cognitive performance in population‐based cohorts remain incompletely defined. We
Peng Cheng +4 more
wiley +1 more source
High-speed three-dimensional random access scanning with SPARCLS
Berlage C +7 more
europepmc +1 more source
Advanced Modeling and Simulation of Multilayer Spin-Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling. [PDF]
Bendra M +4 more
europepmc +1 more source
Spin-based magnetic random-access memory for high-performance computing. [PDF]
Cai K, Jin T, Lew WS.
europepmc +1 more source
Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt. [PDF]
Sun Z +5 more
europepmc +1 more source

