Results 141 to 150 of about 125,218 (322)

Statistical investigation of random telegraph noise Id instabilities in Flash cells at different initial trap-filling conditions

open access: yes, 2007
This work investigates the statistical distribution of random telegraph noise drain current instability in flash memory arrays as a function of the initial trap-filling condition.
R. Gusmeroli   +9 more
core   +1 more source

Self‐Powered Bearing Sensing and Real‐Time Fault Diagnosis Enabled by Non‐Invasive Triboelectric Sensors and Edge AI Acceleration

open access: yesAdvanced Science, EarlyView.
This study achieves the synergistic integration of self‐powered sensing and edge AI acceleration to establish a real‐time fault diagnosis system. The proposed TENG‐based self‐powered bearing sensor (NSE‐TBS) and FPGA‐accelerated edge AI framework fundamentally break through the inherent limitations of conventional monitoring systems, including complex ...
Kehui Zhu   +7 more
wiley   +1 more source

Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States

open access: yes, 2012
In this paper we analyze Random Telegraph Signal (RTS) noise in hafnium-based RRAMs. RTS is measured in HRS, showing fast and slow multilevel switching events.
Andrea Padovani   +9 more
core   +1 more source

Silicon‐Embedded Multifunctional Heterogeneous Integration for Miniaturized Photoplethysmography Detection Devices

open access: yesAdvanced Science, EarlyView.
ABSTRACT The multifunctional integration of chips with high flexibility and scalable manufacturing is crucial for enhancing chip performance, reducing chip size, and simplifying chip design. However, balancing volume, cost, flexibility, and functionality using traditional heterogeneous integration methods is challenging.
Lang Chen   +7 more
wiley   +1 more source

Random telegraph noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations

open access: yes, 2017
This paper presents a physical model to investigate the random telegraph noise (RTN) as an important source of the stochastic variability in redox-based resistive switching RAMs.
Abbaspour, E.   +7 more
core   +1 more source

Organoid Brain‐Machine‐Interface Devices for Central Nervous System Repair

open access: yesAdvanced Science, EarlyView.
We envision organoid brain‐machine‐interface (Organoid‐BMI) devices as new biohybrid bidirectional communication pathways to connect the human CNS and the external world for personalized CNS repair and regeneration. ABSTRACT Central nervous system (CNS) repair and regeneration suffer from tremendous clinical challenges due to current limitations in ...
Yantao Xing   +10 more
wiley   +1 more source

Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime

open access: yes, 2002
We study electronic transport and current noise in 50 nm gate length PMOSFETs at very low temperature ...
X. Jehl   +4 more
core   +1 more source

Engineering Neuronal Network Connectivity Through Precise and Scalable Electrical Modulation

open access: yesAdvanced Science, EarlyView.
This study presents a scalable all‐electrical method for precise neuronal‐circuit reconfiguration based on high‐density microelectrode arrays. By employing biologically inspired plasticity rules, targeted connectivity changes were successfully induced and quantified across diverse neuronal preparations.
Sreedhar S. Kumar   +10 more
wiley   +1 more source

A Soft Mechanoluminescent Skin for High‐Resolution Optical Tactile Sensing in Human–Machine Interaction

open access: yesAdvanced Science, EarlyView.
A soft mechanoluminescent tactile sensor that converts force directly into light is presented, enabling imaging‐based, wiring‐free touch sensing. By integrating a flexible ML‐skin with CMOS readout, the system achieves high sensitivity, fast response, and high spatial resolution, while maintaining structural simplicity and energy efficiency, offering a
Yu Feng   +11 more
wiley   +1 more source

Low-frequency Noise and Random Telegraph Noise in Nanoscale Devices: Modeling and Impact on Circuit Operation

open access: yes, 2019
International audienceIn this work, we present our latest modeling approaches regarding low-frequency noise (LFN) and random telegraph noise (RTN) in advanced MOSFETs, with a special focus on the fully depleted (FD) SOI CMOS technology.
Theodorou, Christoforos   +1 more
core   +1 more source

Home - About - Disclaimer - Privacy