Results 171 to 180 of about 11,790,111 (286)

Investigation of Resonance Characteristics of More Than 10 000 Metal‐Coated Silicon MEMS Cantilevers Using Machine Learning

open access: yesAdvanced Engineering Materials, EarlyView.
More than 10 000 metal‐coated silicon MEMS cantilevers are fabricated and characterized to build a large‐scale experimental dataset spanning multiple vibrational modes. Machine learning algorithms are benchmarked to predict resonance frequency and quality factor, with ensemble based models achieving accuracy approaching experimental uncertainty.
Sina Zare Pakzad   +8 more
wiley   +1 more source

Effect of Calendering and Surface Treatment on the Thermochromic Response of Cholesteric Liquid Crystals on PET Nonwovens

open access: yesAdvanced Engineering Materials, EarlyView.
This study explores the influences of calendering and surface treatment during direct ink writing (DIW) of thermochromic cholesteric liquid crystal (CLC) on PET nonwovens. For the PVA‐coated nonwovens, calendering reduces pore size leading to reduced ink absorption and enhanced spreading. The NeverWet‐coated nonwovens improve thermochromic responses by
Sreenivasan Sreenivasan Narayanan   +3 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

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