Results 121 to 130 of about 42,179 (285)

Defects Dynamic in Photo‐Excited CeO2 and their Influence on CO2 Photoreduction

open access: yesAdvanced Functional Materials, EarlyView.
X‐ray photoelectron spectroscopy study under light excitation is presented to track the defect dynamic (Ce4+ to Ce3+) in CeO2. Surface enhanced Raman spectroscopy confirmed the key role of Ce3+ states in controlling charge and energy transfer across the CeO2‐dye molecule interface.
Rambabu Yalavarthi   +3 more
wiley   +1 more source

Universal In Situ Isotope Exchange Raman Spectroscopy (IERS) Methodology for Measuring Oxygen Surface Exchange Dynamics Using a Probe Layer

open access: yesAdvanced Functional Materials, EarlyView.
A bespoke multilayer thin film configuration has been designed, which overcomes the material dependency of conventional isotope exchange Raman spectroscopy (IERS). This universal IERS methodology is efficient, non‐destructive and provides additional structural information and time resolution, which can be further extended to various isotopic elements ...
Zonghao Shen   +7 more
wiley   +1 more source

Device Integration Technology for Practical Flexible Electronics Systems

open access: yesAdvanced Functional Materials, EarlyView.
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa   +5 more
wiley   +1 more source

High‐Spatiotemporal‐Resolution Transparent Thermoelectric Temperature Sensor Arrays Reveal Temperature‐Dependent Windows for Reversible Photothermal Neuromodulation

open access: yesAdvanced Functional Materials, EarlyView.
Thermoelectric temperature sensors are developed that directly measure heat changes during optical‐based neural stimulation with millisecond precision. The sensors reveal the temperature windows for safe reversible neural modulation: 1.4–4.5 °C enables reversible neural inhibition, while temperatures above 6.1 °C cause permanent thermal damage.
Junhee Lee   +9 more
wiley   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

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