Results 141 to 150 of about 455,439 (302)

Activation‐Induced Turbostratic Ordering in pDCPD‐Derived Hard Carbon Enables Stable Carbonate‐Based Sodium‐Ion Storage

Advanced Science, EarlyView.
Hard carbon derived from templated poly(dicyclopentadiene) as anode for sodium–ion batteries was engineered through carbonization and second‐step CO2${\rm CO}_2$ activation. High‐temperature carbonization and activation increased local ordering while reducing defects without inducing structural fracture.
David Schuster, Glen J. Smales, Max Schmallegger, Julian M Rosalie, Konstantin Kraushaar, Andreas Lißner, Julia Bohdal, Pia Winter, Bernd Fuchsbichler, Stefan Koller, Sebastijan Kovačič, Christian Slugovc   +11 more
wiley   +1 more source

Neutron Depth Profiling: The Core Link Connecting the Microscopic Mechanisms of Lithium‐Ion Batteries With Intelligent Design

Advanced Science, EarlyView.
Neutron depth profiling exploits the 6Li(n,3H)4He reaction to provide quantitative, isotope‐specific, depth‐resolved maps of lithium inside operating lithium‐ion batteries, directly linking lithium transport, dendrite growth and interfacial short‐circuiting to a physics‐informed machine‐learning roadmap that turns this non‐destructive operando ...
Yulong Zhang, Chunjing Yue, Shijiao Liu, Muyang Chen, Xiaokang Shi, Rui Tan, Hongqing Hao, Jie Yang, Xinhua Liu   +8 more
wiley   +1 more source

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

Advanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa, Wataru Namiki, Daiki Nishioka, Maki Nishimura, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

Behavior of non-prismatic RC beams with conventional steel and green GFRP rebars for sustainable infrastructure. [PDF]

Sci Rep, 2023
Suparp S, Khan I, Ejaz A, Khan K, Weesakul U, Hussain Q, Saingam P.   +6 more
europepmc   +1 more source

Shear Strengthening of Skew RC Beams Using Carbon Fiber Reinforced Polymer Strips [PDF]

, 2009
This study demonstrates the shear strengthening of skew Reinforced Concrete (RC) beams using Carbon Fiber Reinforced Polymer (CFRP) strips. Skew RC beams are widely practiced in the construction of bridges and flyovers.
Noor Safwan bin Muhamad, Noor Safwan
core  

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Load-Bearing Performance of Non-Prismatic RC Beams Wrapped with Carbon FRP Composites. [PDF]

Sensors (Basel), 2023
Suparp S, Ejaz A, Khan K, Hussain Q, Joyklad P, Saingam P.   +5 more
europepmc   +1 more source

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

Advanced Electronic Materials, EarlyView.
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee, Dong Hyeop Shin, Seung Joo Myoung, Soohong Eo, Wonjung Kim, Seeun Lee, Changwook Kim, Junjong Lee, Yoon Jung Lee, Sung‐Jin Choi, Sungjun Kim, Dae Hwan Kim   +11 more
wiley   +1 more source