Results 171 to 180 of about 93,913 (315)
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Flexural Behavior of Two-Span Continuous CFRP RC Beams. [PDF]
Pang M, Shi S, Hu H, Lou T.
europepmc +1 more source
Near surface mounted CFRP-based technique for the strengthening of concrete structures [PDF]
To assess the effectiveness of the Near Surface Mounted (NSM) strengthening technique, an experimental program was carried out involving reinforced concrete (RC) columns and beams.
Barros, Joaquim +4 more
core
Advancing Energy Materials by In Situ Atomic Scale Methods
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source
Fatigue Life Prediction of CFRP-Strengthened RC Beams with Flexural Crack under Hygrothermal Environments. [PDF]
Guo X, Cui H, Wang Y, Chen Z.
europepmc +1 more source
This review highlights the use of atomic layer deposition (ALD) for fabricating thermoelectric thin films with atomic‐scale control. Four material classes—chalcogenides, doped oxides, ternary oxides, and multilayered structures—are compared in terms of growth dynamics, structure–property relationships, and thermoelectric performance. The precise tuning
Jorge Luis Vazquez‐Arce +5 more
wiley +1 more source
Structural Behavior of RC Beams Containing Unreinforced Drilled Openings with and without CFRP Strengthening. [PDF]
El-Sisi AA +5 more
europepmc +1 more source
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee +5 more
wiley +1 more source
Influence of Cross-Section Shape and FRP Reinforcement Layout on Shear Capacity of Strengthened RC Beams. [PDF]
Ahmed M, Colajanni P, Pagnotta S.
europepmc +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source

