Results 131 to 140 of about 73,664 (313)

High aspect ratio silicon ring-shape micropillars fabricated by deep reactive ion etching with sacrificial structures

open access: yesMicro and Nano Engineering
This paper presents the fabrication of widely-spaced high aspect ratio ring-shape pillars (i.e. hollow pillars). Lateral etching of the pillars during deep reactive ion etching is challenging.
Wenhan Hu, Zihao Wang, Aixi Pan, Bo Cui
doaj   +1 more source

Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma [PDF]

open access: bronze, 2012
Chalermwat Wongwanitwattana   +5 more
openalex   +1 more source

Tuning the Electronic Structure and Spin State of Fe─N─C Catalysts Using an Axial Oxygen Ligand and Fe Clusters for High‐Efficiency Rechargeable Zinc–Air Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou   +8 more
wiley   +1 more source

Single Solid‐State Ion Channels as Potentiometric Nanosensors

open access: yesAdvanced Functional Materials, EarlyView.
Single gold nanopores functionalized with mixed self‐assembled monolayers act as solid‐state ion channels for direct, selective potentiometric sensing of inorganic ions (Ag⁺). The design overcomes key miniaturization barriers of conventional ion‐selective electrodes by combining low resistivity with suppressed loss of active components, enabling robust
Gergely T. Solymosi   +4 more
wiley   +1 more source

Removal of Photoresist Mask after the Cl2/HBr/CF4Reactive Ion Silicon Etching [PDF]

open access: bronze, 2010
Tae-Kyung Ha   +3 more
openalex   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

open access: yesAdvanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon   +9 more
wiley   +1 more source

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