Results 131 to 140 of about 73,664 (313)
This paper presents the fabrication of widely-spaced high aspect ratio ring-shape pillars (i.e. hollow pillars). Lateral etching of the pillars during deep reactive ion etching is challenging.
Wenhan Hu, Zihao Wang, Aixi Pan, Bo Cui
doaj +1 more source
Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma [PDF]
Chalermwat Wongwanitwattana +5 more
openalex +1 more source
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou +8 more
wiley +1 more source
Single Solid‐State Ion Channels as Potentiometric Nanosensors
Single gold nanopores functionalized with mixed self‐assembled monolayers act as solid‐state ion channels for direct, selective potentiometric sensing of inorganic ions (Ag⁺). The design overcomes key miniaturization barriers of conventional ion‐selective electrodes by combining low resistivity with suppressed loss of active components, enabling robust
Gergely T. Solymosi +4 more
wiley +1 more source
Removal of Photoresist Mask after the Cl2/HBr/CF4Reactive Ion Silicon Etching [PDF]
Tae-Kyung Ha +3 more
openalex +1 more source
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley +1 more source
Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS). [PDF]
Sombrio G +5 more
europepmc +1 more source
Reactive ion beam etching of ZnSe and ZnS epitaxial films using Cl2 electron cyclotron resonance plasma [PDF]
Tohru Saitoh +2 more
openalex +1 more source
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon +9 more
wiley +1 more source

