Results 151 to 160 of about 156,728 (358)
High resolution reactive ion etching of GaN and etch-induced effects [PDF]
Rebecca Cheung+6 more
openalex +1 more source
An environmentally friendly transfer printing method of nm‐thick giant magnetoresistive (GMR) sensors is demonstrated. This method, relying on water and biocompatible polyvinyl alcohol (PVA) polymer without the need of complex treatments, allows transferring thin films to a wide range of biological, organic, and inorganic substrates.
Olha Bezsmertna+7 more
wiley +1 more source
Polymerization of fluorocarbons in reactive ion etching plasmas [PDF]
W. W. Stoffels+2 more
openalex +1 more source
Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong+22 more
wiley +1 more source
Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]
Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Christiansen, S.+4 more
core
Sensor systems for real-time feedback control of reactive ion etching [PDF]
Tyrone Eugene Benson+11 more
openalex +1 more source
Eco‐friendly nanowave‐textured implants produced via femtosecond laser fabrication enhance bone regeneration by orchestrating a precise mechanotransduction cascade. This nanotopography directs mesenchymal stem cell alignment and cytoskeletal organization, triggering changes in nuclear shape and chromatin acetylation that prime cells for osteogenesis ...
Bosu Jeong+15 more
wiley +1 more source
Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF6/O2 Gas Mixture
This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride.
Andrey Miakonkikh, Vitaly Kuzmenko
doaj +1 more source
Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS). [PDF]
Sombrio G+5 more
europepmc +1 more source
MXene dervied CoFe composites show increased initial Oxygen Evolution Reaction (OER) activity compared to the pure CoFe and MXene in an Anion Exchange Membrane device. Vanadium vacancies in the MXene plays a role in increased OER activity and hinders Fe leaching in the AEM device over using the pure V2C MXene as a support material for the CoFe ...
Can Kaplan+16 more
wiley +1 more source