Results 151 to 160 of about 106,837 (225)

Optimization of Diamond Polishing Process for Sub-Nanometer Roughness Using Ar/O₂/SF₆ Plasma. [PDF]

Materials (Basel)
Zhao L, Wang X, Jiang M, Zhao C, Jiang N, Nishimura K, Yi J, Fang S.   +7 more
europepmc   +1 more source

Selective Wet Etching for Scalable Nanofabrication of Patterned MXene Thin Films. [PDF]

Nano Lett
Favelukis B, Ratzker B, Juhl Y, Chneider NS, Ashuach O, Greenberg A, Jopp J, Shekhter P, Sokol M.   +8 more
europepmc   +1 more source

Controlling Etch Anisotropy of Crystalline Germanium Nanostructures. [PDF]

Small
Saidov K, Aabdin Z, Yan H, Pacco A, Holsteyns F, Mirsaidov U.   +5 more
europepmc   +1 more source

Design and Fabrication of Silicon Pressure Sensors Based on Wet Etching Technology. [PDF]

Micromachines (Basel)
Li F, Yan S, Lei C, Wang D, Wei X, Yu J, Li Y, Ji P, Tan Q, Liang T.   +9 more
europepmc   +1 more source

Thermally Robust Plasmonic Nanorings from Titanium Nitride. [PDF]

ACS Omega
Baami González X, Leidinger PM, Rente B, Bower R, Lauritsen JV, Petrov PK, Sutherland DS.   +6 more
europepmc   +1 more source

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Deep Reactive Ion Etching

Handbook of Silicon Based MEMS Materials and Technologies, 2010
Publisher Summary This chapter discusses the deep reactive ion etching in detail. Reactive Ion Etching (RIE), also known as plasma etching or dry etching, and its extension deep reactive ion etching (DRIE) are processes that combine physical and chemicals effect to remove material from the wafer surface.
Kai Kolari, Sami Franssila, Lauri Sainiemi, Franz Laermer   +3 more
semanticscholar   +8 more sources

Reactive ion etching and deep reactive ion etching processes

Other Conferences, 2022
Semiconductor technology is a new technology that has only begun to develop in recent decades, but after just a few decades of development, it has become one of the largest industries in the world today, and it exists in many products in our daily lives.
Yih-Fen Wu, Hai-Lin He
semanticscholar   +1 more source

Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching

, 2020
Continued downscaling of semiconductor devices has placed stringent constraints on all aspects of the fabrication process including plasma-assisted anisotropic etching.
Ryan J. Gasvoda, Zhonghao Zhang, Scott Wang, E. Hudson, S. Agarwal   +4 more
semanticscholar   +1 more source

Reactive ion etching of LiNbO3

Applied Physics Letters, 1981
We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
S. P. Lyman, J. L. Jackel, E. L. Hu, Richard Howard   +3 more
openaire   +2 more sources

Reactive ion etching of silicon

Journal of Vacuum Science and Technology, 1979
Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
openaire   +2 more sources