Results 161 to 170 of about 106,837 (225)

Reactive ion etching of diamond

Applied Physics Letters, 1989
A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II-A ...
G. S. Sandhu, Wei-Kan Chu
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Reactive ion etching of niobium

Journal of Vacuum Science and Technology, 1981
The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result.
B. Hunt, Alan W Kleinsasser, Charles T. Rogers, Robert A. Buhrman, T. T. Foxe   +4 more
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Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

Journal of microelectromechanical systems, 2018
This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-deep (>500- $\mu \text{m}$ ) and ultra-high aspect-ratio (UHAR) silicon structures (AR > 40 for 1-mm through-trench etch, $\text {AR}\approx 80$ for 500- $\mu ...
Y. Tang, A. Sandoughsaz, K. J. Owen, K. Najafi   +3 more
semanticscholar   +1 more source

Reactive ion etching and plasma etching of tungsten

Microelectronic Engineering, 1993
Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
Patrick Verdonck, G. Brasseur, Jacobus W. Swart   +2 more
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Reactive Ion Etching of Carbon Nanowalls

Japanese Journal of Applied Physics, 2011
Two-dimensionally standing graphene sheets, i.e., carbon nanowalls (CNWs), were synthesized on a Si substrate employing a capacitively coupled fluorocarbon plasma-enhanced chemical vapor deposition system together with H radical injection. To apply CNWs in electronic devices and/or membrane filters, we have demonstrated the reactive ion etching ...
Mineo Hiramatsu, Shingo Kondo, Masaru Hori, Yudai Miyawaki, Hiroki Kondo, Hajime Sasaki, Hiroyuki Kano   +6 more
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Classification of etching mechanism in reactive ion beam etch

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989
Etching characteristics for GaAs and InP using an ultrahigh vacuum reactive ion beam etching (UHV-RIBE) system have been classified. Using a horizontal electron cyclotron resonance (ECR) ion source, a uniform ion beam covering a large area is obtained, and etching at low pressure (≂10−5 Torr) has become possible.
T. Tadokoro, F. Koyama, Kenichi Iga
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Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

Applied Physics Express, 2019
Plasma-induced damage was reduced by multistep-bias etching that involved a stepwise decrease of the etching bias power (Pbias) and subsequent annealing.
S. Yamada, Masato Omori, Hideki Sakurai, Y. Osada, R. Kamimura, T. Hashizume, J. Suda, T. Kachi   +7 more
semanticscholar   +1 more source

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

MRS Proceedings, 1997
ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied ...
Jaewon Lee, Geun-Yong Yeom, Hyong-Soo Park, Yongjo Park, Taeil Kim, Myong-Cheol Yoo, Hyeon-Soo Kim   +6 more
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Silicon Deep Reactive Ion Etching with aluminum hard mask

Materials Research Express, 2019
Silicon Deep Reactive Ion Etching (DRIE) process using a multi-layer mask containing a sputtered Aluminum thin film is studied. Aluminum is a candidate for very high aspect ratio DRIE, due to tis very low etch rate, but its adoption is hindered by the ...
A. Bagolini, Pietro Scauso, S. Sanguinetti, P. Bellutti   +3 more
semanticscholar   +1 more source

Reactive-Ion Etching

Physics Today, 1986
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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