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Reactive ion etching for submicron structures [PDF]
Journal of Vacuum Science and Technology, 1981 The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions.
Ilesanmi Adesida +3 more
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1980 International Electron Devices Meeting, 1980
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
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The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
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MRS Proceedings, 1993
AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham +1 more
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AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham +1 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
J. Ruzyllo +6 more
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The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
J. Ruzyllo +6 more
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1984
Publisher Summary This chapter discusses reactive ion etching. The radicals and neutrals participate in chemical reactions on the film surface to produce volatile species or their precursors, while positive ions are accelerated across the plasma sheath in the inter-electrode space and bombard wafer surfaces on the cathode to initiate or complete the ...
Richard Joseph Saia, Bernard Gorowitz
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Publisher Summary This chapter discusses reactive ion etching. The radicals and neutrals participate in chemical reactions on the film surface to produce volatile species or their precursors, while positive ions are accelerated across the plasma sheath in the inter-electrode space and bombard wafer surfaces on the cathode to initiate or complete the ...
Richard Joseph Saia, Bernard Gorowitz
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1984
Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
T.M. Mayer, B.A. Heath
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Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
T.M. Mayer, B.A. Heath
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Deposition and reactive ion etching of molybdenum
Applied Physics Letters, 1983The stress in molybdenum films deposited by dc magnetron sputtering in neon has been characterized. Fabrication of 1-μ-thick films 2 cm in diameter on polyimide membranes has been achieved with low-stress material. A reactive ion etching process is described with 75-nm resolution and 15:1 aspect ratios.
Abdelhak Bensaoula +3 more
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Diamond Microstructuring by Deep Anisotropic Reactive Ion Etching
Physica Status Solidi (a), 2018Fabrication of diamond micro‐patterned structures is a technological challenge due to the outstanding hardness and chemical stability of the material. In this work, the synthetic diamond reactive ion etching (RIE) process is studied.
A. Golovanov +6 more
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Patterning of Benzocyclobutene by Reactive Ion Etching
Journal of The Electrochemical Society, 1996This work focuses on the fine-line patterning of benzocyclobutene (BCB), a silicon containing, thermoset polymer for potential application as an interlayer dielectric (ILD) in multilevel metallization. Etch rates for BCB have been determined in p asmas containing mixtures of O 2 and CF 4 .
Robert D. Tacito +1 more
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Etch mechanism in the reactive ion etching of silicon nitride
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991Reactive ion etching of silicon nitride with CHF3/O2 plasmas has been studied in a hexode reactor and compared to silicon dioxide etching. Measurements of etch rates as a function of gas composition and pressure were combined with Langmuir probe data for the ion flux to the substrate to give etch yields (number of substrate atoms removed per bombarding
Ch. Steinbrüchel +2 more
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