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Dimensionless parameters of reactive ion etching
Proceedings., 39th Electronic Components Conference, 2003The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
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Technology of reactive ion etching
1998Abstract The original meaning of ‘etching’ is ‘to eat’; the process of removing something from an object. Moreover, it is impressive that another original meaning of it is ‘to feed’. In fact, reactive ion etching (RIE) consists of two processes; ‘to eat’ and ‘to feed’.
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Sidewall Tapering in Reactive Ion Etching
Journal of The Electrochemical Society, 1985On signale un phenomene de retrecissement suivant les parois laterales en gravure ionique reactive, avec une pente ∼75°. Une facette du masque de photoresist se forme a cause de la variation angulaire de la vitesse de perte de resist. L'angle de la facette avec le plan vertical est d'environ 16° et sa vitesse de propagation plus de deux fois la vitesse
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Damage effects in reactive ion etching
AIP Conference Proceedings, 1984Reactive ion etching can cause extensive, electrically active damage. This damage can be categorized as (i) impurity and etching‐ion implantation, (ii) residue and film formation, and (iii) intrinsic bonding damage. Instrinsic bonding damage is the most difficult to deal with since it appears inherent to dry etching processes which employ directed ion ...
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Reactive ion etching in microcircuit fabrication
Thin Solid Films, 1981P.M. Schaible, G.C. Schwartz
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