Results 291 to 300 of about 72,916 (314)

Reactive Ion Etching Of Silicon Dioxide

SPIE Proceedings, 1987
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
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Technology of reactive ion etching

1998
Abstract The original meaning of ‘etching’ is ‘to eat’; the process of removing something from an object. Moreover, it is impressive that another original meaning of it is ‘to feed’. In fact, reactive ion etching (RIE) consists of two processes; ‘to eat’ and ‘to feed’.
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Reactive ion etching for submicron structures

Journal of Vacuum Science and Technology, 1981
The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions.
J. D. Chinn, I. Adesida, E. D. Wolf, R. C. Tiberio   +3 more
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Radial Etch Rate Nonuniformity in Reactive Ion Etching

Journal of The Electrochemical Society, 1984
A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Reactive Ion Etching of Polymer Films

International Polymer Processing, 1989
Abstract The need for nanometer-sized features in integrated circuits calls for the use of dry-etching techniques using glow-discharge plasmas. The reactive ion etching (RIE) mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight-walled etched structures.
B. C. Dems, F. Rodriguez, C. M. Solbrig, Y.M.N. Namaste, S. K. Obendorf   +4 more
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Lithography and Reactive Ion Etching in Microfabrication

1995
The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
I. W. Rangelow, P. Hudek
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Dimensionless parameters of reactive ion etching

Proceedings., 39th Electronic Components Conference, 2003
The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
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Sidewall Tapering in Reactive Ion Etching

Journal of The Electrochemical Society, 1985
On signale un phenomene de retrecissement suivant les parois laterales en gravure ionique reactive, avec une pente ∼75°. Une facette du masque de photoresist se forme a cause de la variation angulaire de la vitesse de perte de resist. L'angle de la facette avec le plan vertical est d'environ 16° et sa vitesse de propagation plus de deux fois la vitesse
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Deep Reactive Ion Etching

2010
Laermer, Franz, Franssila, Sami, Sainiemi, Lauri, Kolari, Kai   +3 more
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Reactive Ion Etching of Tantalum in Silicon Tetrachloride

SSRN Electronic Journal, 2022
Asaad K. Edaan Al-mashaal, Rebecca Cheung   +1 more
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