Results 291 to 300 of about 156,728 (358)

Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching

, 2020
Continued downscaling of semiconductor devices has placed stringent constraints on all aspects of the fabrication process including plasma-assisted anisotropic etching.
Ryan J. Gasvoda, Zhonghao Zhang, Scott Wang, E. Hudson, S. Agarwal   +4 more
semanticscholar   +1 more source

Reactive ion etching of silicon

Journal of Vacuum Science and Technology, 1979
Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
openaire   +2 more sources

Reactive ion etching of LiNbO3

Applied Physics Letters, 1981
We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
S. P. Lyman, J. L. Jackel, E. L. Hu, Richard Howard   +3 more
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Reactive ion etching of niobium

Journal of Vacuum Science and Technology, 1981
The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result.
B. Hunt, Alan W Kleinsasser, Charles T. Rogers, Robert A. Buhrman, T. T. Foxe   +4 more
openaire   +2 more sources

Reactive ion etching of diamond

Applied Physics Letters, 1989
A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II-A ...
G. S. Sandhu, Wei-Kan Chu
openaire   +2 more sources

Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

Journal of microelectromechanical systems, 2018
This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-deep (>500- $\mu \text{m}$ ) and ultra-high aspect-ratio (UHAR) silicon structures (AR > 40 for 1-mm through-trench etch, $\text {AR}\approx 80$ for 500- $\mu ...
Y. Tang, A. Sandoughsaz, K. J. Owen, K. Najafi   +3 more
semanticscholar   +1 more source

Reactive ion etching and plasma etching of tungsten

Microelectronic Engineering, 1993
Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
Patrick Verdonck, G. Brasseur, Jacobus W. Swart   +2 more
openaire   +2 more sources

Reactive Ion Etching of Carbon Nanowalls

Japanese Journal of Applied Physics, 2011
Two-dimensionally standing graphene sheets, i.e., carbon nanowalls (CNWs), were synthesized on a Si substrate employing a capacitively coupled fluorocarbon plasma-enhanced chemical vapor deposition system together with H radical injection. To apply CNWs in electronic devices and/or membrane filters, we have demonstrated the reactive ion etching ...
Mineo Hiramatsu, Shingo Kondo, Masaru Hori, Yudai Miyawaki, Hiroki Kondo, Hajime Sasaki, Hiroyuki Kano   +6 more
openaire   +2 more sources

Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

Applied Physics Express, 2019
Plasma-induced damage was reduced by multistep-bias etching that involved a stepwise decrease of the etching bias power (Pbias) and subsequent annealing.
S. Yamada, Masato Omori, Hideki Sakurai, Y. Osada, R. Kamimura, T. Hashizume, J. Suda, T. Kachi   +7 more
semanticscholar   +1 more source

Classification of etching mechanism in reactive ion beam etch

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989
Etching characteristics for GaAs and InP using an ultrahigh vacuum reactive ion beam etching (UHV-RIBE) system have been classified. Using a horizontal electron cyclotron resonance (ECR) ion source, a uniform ion beam covering a large area is obtained, and etching at low pressure (≂10−5 Torr) has become possible.
T. Tadokoro, F. Koyama, Kenichi Iga
openaire   +2 more sources