Results 301 to 310 of about 72,916 (314)

Influence of resists on reactive ion etching

Czechoslovak Journal of Physics, 1993
In the course of plasma etching we can observe a loading effect, i.e. the etch rate depends on the size of the etched surface exposed to the plasma. This phenomenon was explained according to Mogab by the plasma active etch species depletion via a rapid etch reaction.
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Damage effects in reactive ion etching

AIP Conference Proceedings, 1984
Reactive ion etching can cause extensive, electrically active damage. This damage can be categorized as (i) impurity and etching‐ion implantation, (ii) residue and film formation, and (iii) intrinsic bonding damage. Instrinsic bonding damage is the most difficult to deal with since it appears inherent to dry etching processes which employ directed ion ...
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Reactive Ion Etching

1984
BERNARD GOROWITZ, RICHARD J. SAIA
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Reactive Ion Etching (RIE)

2008
Sami Franssila, Lauri Sainiemi
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Reactive ion etching of silicon

Vacuum, 1980
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Reactive ion etching in microcircuit fabrication

Thin Solid Films, 1981
P.M. Schaible, G.C. Schwartz
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Reactive Ion Etching (RIE)

2011
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Plasma and Reactive Ion Etching

2016
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Plasma and Reactive Ion Etching

2001
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Reactive ion etching in chlorinated plasmas

Microelectronics Reliability, 1981
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