Results 301 to 310 of about 156,728 (358)
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Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching
MRS Proceedings, 1997ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied ...
Jaewon Lee +6 more
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Physics Today, 1986
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Reactive ion etching for submicron structures [PDF]
Journal of Vacuum Science and Technology, 1981 The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions.
Ilesanmi Adesida +3 more
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ACS Nano, 2017
The sliding-mode triboelectric nanogenerator (S-TENG) with grated structure has important applications in energy harvest and active sensors; however its concavo-convex structure leads to large frictional resistance and abrasion.
Wanyu Shang +6 more
semanticscholar +1 more source
The sliding-mode triboelectric nanogenerator (S-TENG) with grated structure has important applications in energy harvest and active sensors; however its concavo-convex structure leads to large frictional resistance and abrasion.
Wanyu Shang +6 more
semanticscholar +1 more source
1980 International Electron Devices Meeting, 1980
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
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The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
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MRS Proceedings, 1993
AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham +1 more
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AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham +1 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
J. Ruzyllo +6 more
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The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
J. Ruzyllo +6 more
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Diamond Microstructuring by Deep Anisotropic Reactive Ion Etching
Physica Status Solidi (a), 2018Fabrication of diamond micro‐patterned structures is a technological challenge due to the outstanding hardness and chemical stability of the material. In this work, the synthetic diamond reactive ion etching (RIE) process is studied.
A. Golovanov +6 more
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1984
Publisher Summary This chapter discusses reactive ion etching. The radicals and neutrals participate in chemical reactions on the film surface to produce volatile species or their precursors, while positive ions are accelerated across the plasma sheath in the inter-electrode space and bombard wafer surfaces on the cathode to initiate or complete the ...
Richard Joseph Saia, Bernard Gorowitz
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Publisher Summary This chapter discusses reactive ion etching. The radicals and neutrals participate in chemical reactions on the film surface to produce volatile species or their precursors, while positive ions are accelerated across the plasma sheath in the inter-electrode space and bombard wafer surfaces on the cathode to initiate or complete the ...
Richard Joseph Saia, Bernard Gorowitz
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1984
Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
T.M. Mayer, B.A. Heath
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Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
T.M. Mayer, B.A. Heath
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