Results 311 to 320 of about 156,728 (358)

Deposition and reactive ion etching of molybdenum

Applied Physics Letters, 1983
The stress in molybdenum films deposited by dc magnetron sputtering in neon has been characterized. Fabrication of 1-μ-thick films 2 cm in diameter on polyimide membranes has been achieved with low-stress material. A reactive ion etching process is described with 75-nm resolution and 15:1 aspect ratios.
Abdelhak Bensaoula, J. C. Wolfe, James A. Oro, Alex Ignatiev   +3 more
openaire   +2 more sources

Patterning of Benzocyclobutene by Reactive Ion Etching

Journal of The Electrochemical Society, 1996
This work focuses on the fine-line patterning of benzocyclobutene (BCB), a silicon containing, thermoset polymer for potential application as an interlayer dielectric (ILD) in multilevel metallization. Etch rates for BCB have been determined in p asmas containing mixtures of O 2 and CF 4 .
Robert D. Tacito, Christoph Steinbrüchel   +1 more
openaire   +2 more sources

Etch mechanism in the reactive ion etching of silicon nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991
Reactive ion etching of silicon nitride with CHF3/O2 plasmas has been studied in a hexode reactor and compared to silicon dioxide etching. Measurements of etch rates as a function of gas composition and pressure were combined with Langmuir probe data for the ion flux to the substrate to give etch yields (number of substrate atoms removed per bombarding
Ch. Steinbrüchel, B. J. Howard, J. Dulak   +2 more
openaire   +2 more sources

Inductively coupled plasma reactive-ion etching of β-Ga2O3: Comprehensive investigation of plasma chemistry and temperature

, 2017
The authors investigated the inductively coupled plasma reactive-ion etching (ICP-RIE) of β-Ga2O3 using different fluorine and chlorine-based plasmas. Sn-doped (-201) oriented β-Ga2O3 substrates were etched using SF6/Ar, CHF3/Ar, O2/Ar, BCl3/Ar, and Cl2 ...
Amit P. Shah, Arnab Bhattacharya
semanticscholar   +1 more source

Microwave etching device for reactive ion etching

Materials Science and Engineering: A, 1991
Abstract Electron cycloton resonance (ECR) plasmas are different from glow dischargeplasmas and introduce new complexities and possibilities. For dry etching processes (reactive ion etching), the operation in a low pressure regime and the high etch rates achievable at low ion energies,which can be controlled by an independently adjustable r.f.
openaire   +2 more sources

Deep Reactive Ion Etching of Silicon

MRS Proceedings, 1998
AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
Kuo-Shen Chen, Martin A. Schmidt, Herbert H. Sawin, Arturo A. Ayon, Kevin A. Lohner, S.M. Spearing   +5 more
openaire   +2 more sources

Reactive Ion Etching Of Silicon Dioxide

SPIE Proceedings, 1987
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
openaire   +2 more sources

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

ACS Applied Materials and Interfaces, 2013
We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE)
S. Kunuku, K. J. Sankaran, Cheng-Yen Tsai, Wen‐Hao Chang, N. Tai, K. Leou, I. Lin   +6 more
semanticscholar   +1 more source

Reactive Ion Etching of Polymer Films

International Polymer Processing, 1989
Abstract The need for nanometer-sized features in integrated circuits calls for the use of dry-etching techniques using glow-discharge plasmas. The reactive ion etching (RIE) mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight-walled etched structures.
B. C. Dems, S. K. Obendorf, C. M. Solbrig, Y. M. N. Namaste, F. Rodriguez   +4 more
openaire   +2 more sources

Fabrication of silicon nanostructures with large taper angle by reactive ion etching

, 2014
Micro- and nanostructures with a tapered sidewall profile are important for antireflection and light trapping applications in solar cell, light emitting diode, and photodetector/imager. Here, the authors will show two etching processes that offer a large
F. Saffih, Celal Con, Alanoud Alshammari, M. Yavuz, B. Cui   +4 more
semanticscholar   +1 more source