Results 321 to 330 of about 156,728 (358)

Reactive Ion Etching of Tantalum Pentoxide

Journal of The Electrochemical Society, 1983
Etching experiments were performed using a parallel plate, RF reactive ion etching (RIE) system (ANELVA DEM-451M) with a 13.56 MHz RF power supply. The 250 mm diameter electrodes with cathode coupled configuration are separated by 89 mm. The wafers are mounted on the water-cooled cathode during etching.
Bunjiro Tsujiyama, Takashi Unagami, Shunji Seki   +2 more
openaire   +2 more sources

Selective Reactive Ion Etching of TiW

Journal of The Electrochemical Society, 1985
TiW is used as a barrier to interdiffusion between aluminum or aluminum copper thin films (used as interconnections in integrated circuits) and silicon or PtSi contacts, thereby preventing junction short circuits. One method of defining VLSI interconnection patterns is by a lift-off technique.
G. C. Schwartz, P. M. Schaible
openaire   +2 more sources

Reactive Ion Etching of Silicon Dioxide

Journal of The Electrochemical Society, 1982
The problem is explored of selectively etching SiO/sub 2/ over a silicon substrate by using a planar, dual plasma/reactive ion etching system with a 3000 W, 13.56 MHz rf power supply. Selective etching is achieved with CHF/sub 3/ at applied powers between 2500 and 3000 W by adjusting the chemistry of the plasma with the P/F ratio toward the onset of ...
F. C. See, R. W. Light
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Dimensionless parameters of reactive ion etching

Proceedings., 39th Electronic Components Conference, 2003
The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
openaire   +2 more sources

Lithography and Reactive Ion Etching in Microfabrication

1995
The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
Peter Hudek, Ivo W. Rangelow
openaire   +2 more sources

Milestones in deep reactive ion etching

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., 2005
Deep reactive ion etching (DRIE) has virtually changed MEMS. The basic technology originally developed at Bosch overcomes design restrictions and compatibility problems related to the old wet-etching technology. Today, after a decade of "Bosch DRIE" in the field, a large variety of new MEMS devices is fabricated using this technology, and a broad DRIE ...
F. Laermer, A. Urban
openaire   +2 more sources

Sidewall Tapering in Reactive Ion Etching

Journal of The Electrochemical Society, 1985
On signale un phenomene de retrecissement suivant les parois laterales en gravure ionique reactive, avec une pente ∼75°. Une facette du masque de photoresist se forme a cause de la variation angulaire de la vitesse de perte de resist. L'angle de la facette avec le plan vertical est d'environ 16° et sa vitesse de propagation plus de deux fois la vitesse
openaire   +2 more sources

Reactive ion etching of GaAs in CCl2F2

Applied Physics Letters, 1981
The reactive ion etching of (100) GaAs in CCl2F2 and mixed CCl2F2+Ar discharges has been investigated. Anisotropic etching with removal rates R of 0.8 mm/min have been obtained in pure CCl2F2 discharges operated at 5.3 Pa (40 mTorr) and −3 kV, whereas the physical sputtering rate in pure Ar discharges under these conditions was only 0.04 mm/min.
J. E. Greene, R. E. Klinger
openaire   +2 more sources

Ultrahigh throughput silicon nanomanufacturing by simultaneous reactive ion synthesis and etching.

ACS Nano, 2011
One-dimensional nanostructures, such as nanowhisker, nanorod, nanowire, nanopillar, nanocone, nanotip, nanoneedle, have attracted significant attentions in the past decades owing to their numerous applications in electronics, photonics, energy conversion
Yi Chen, Zhida Xu, M. Gartia, Daren Whitlock, Y. Lian, Gang Logan Liu   +5 more
semanticscholar   +1 more source

Formation of silicon grass: Nanomasking by carbon clusters in cyclic deep reactive ion etching

, 2011
Initial cluster formation on silicon surfaces in cyclic deep reactive ion etching (c-DRIE) using c-C4F8/SF6 plasma is investigated. These clusters act as a nanomask for the fabrication of nanostructured surfaces such as silicon grass.
S. Leopold, C. Kremin, A. Ulbrich, S. Krischok, M. Hoffmann   +4 more
semanticscholar   +1 more source