Results 331 to 340 of about 156,728 (358)

Microloading effect in reactive ion etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
The etch rate of silicon, during reactive ion etching (RIE), depends on the total exposed area. This is called the loading effect. However, local variations in the pattern density will, in a similar way, cause local variations in the etch rate. This effect is caused by a local depletion of reactive species and is called the microloading effect. Silicon
Hans-Olof Blom, Christer Hedlund, Sören Berg   +2 more
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Radial Etch Rate Nonuniformity in Reactive Ion Etching

Journal of The Electrochemical Society, 1984
A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Anisotropic reactive ion etching of titanium

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989
The reactive ion etching of titanium is described using rf discharges of CCl4 and O2 with additions of fluorine containing gases. Because of these additions the titanium etch rate increases substantially in comparison with the pure CCl4/O2 plasma. This is presumably due to a shift of equilibrium reactions within the discharge towards the production of ...
K. Blumenstock, D. Stephani
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CHF3-reactive ion etching for waveguides

Sensors and Actuators A: Physical, 1993
Abstract The most favourable technological process to obtain Si/SiO 2 /PSG/SiO 2 -type waveguides by reactive ion etching has been developed. Preliminary experiments to find suitable gaseous mixtures to etch at higher etching rates, as well as to obtain higher selectivities against photoresist mask, have been designed.
J. Muñoz, R. Gonzalez, M. Tudanca, Carlos Domínguez   +3 more
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Influence of resists on reactive ion etching

Czechoslovak Journal of Physics, 1993
In the course of plasma etching we can observe a loading effect, i.e. the etch rate depends on the size of the etched surface exposed to the plasma. This phenomenon was explained according to Mogab by the plasma active etch species depletion via a rapid etch reaction.
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Reactive ion etching for failure analysis applications

30th Annual Proceedings Reliability Physics 1992, 1992
An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls.
S.M. LeCours, E.B. Roy, M.T. Abramo
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Damage effects in reactive ion etching

AIP Conference Proceedings, 1984
Reactive ion etching can cause extensive, electrically active damage. This damage can be categorized as (i) impurity and etching‐ion implantation, (ii) residue and film formation, and (iii) intrinsic bonding damage. Instrinsic bonding damage is the most difficult to deal with since it appears inherent to dry etching processes which employ directed ion ...
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Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

, 2010
Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate.
M. Mehran, S. Mohajerzadeh, Z. Sanaee, Y. Abdi   +3 more
semanticscholar   +1 more source

Role of ions in reactive ion etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
Energetic ion bombardment is responsible for the anisotropic etching which can be obtained in reactive ion etching. This has been recognized for many years but the detailed mechanisms involved in this process are still not well understood. In this paper, the various phenomena resulting from ion bombardment of a surface in a reactive gas glow discharge ...
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Deep reactive ion etching

Handbook of Silicon Based MEMS Materials and Technologies, 2020
F. Laermer, S. Franssila, L. Sainiemi, L. Sainiemi, K. Kolari   +4 more
semanticscholar   +1 more source