Results 11 to 20 of about 150,919 (264)
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Micromachines, 2023 Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices.
Juhee Jeon, Kyoungah Cho, Sangsig Kim
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IEEE Access, 2021 In this study, we investigated the self-rectifying characteristics of $p$ -Si/O-doped ZrN/TiN structures in order to overcome a disturbance between neighboring cells in array structures. The proposed device shows a nonlinear selection characteristic and
Jinsu Jung +3 more
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IEEE Access, 2020 In recent years, the low power design of Internet of Things devices has become increasingly important. The most basic method to implement a low power design is to reduce static power consumption.
Gwang Hui Choi, Taehui Na
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A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories
Computers, 2017 Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
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A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM
IEEE Access, 2018 Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures.
He Zhang +4 more
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Creative Universities : Reimagining Education for Global Challenges and Alternative Futures (2021)
PRISM, 2023 The book ‘Creative Universities’ by Anke Schwittay (2021) is unlike any other academic text I have read about teaching; the pages buzz with hope, creative vision and radical possibilities, and it left me wanting to do my teaching differently, to shake up
Anne-Marie Smith
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IEEE Journal of the Electron Devices Society, 2016 An efficient way to reduce the loss of stored charge in a memory cell was proposed in this paper. Conventionally, the storage structure is stressed by applying voltages during the read operation.
Chien-Shun Liao +2 more
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Read disturb fault detection in STT-MRAM [PDF]
2014 International Test Conference, 2014 Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to become a universal memory technology because of its various advantageous features such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Bishnoi, R. +3 more
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Teacher points to dyslexia as a major cause of school failure
Zero-a-seis, 2002 In the past seven years, Professor Vincent Martins has developed studies on the contribution of linguistics to the diagnosis of dyslexia. The dyslexia is a disturbance or inconvenience to the level of reading.
Vicente Martins
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Creative Universities : Reimagining Education for Global Challenges and Alternative Futures (2021)
PRISM, 2022 The book ‘Creative Universities’ by Anke Schwittay (2021) is unlike any other academic text I have read about teaching; the pages buzz with hope, creative vision and radical possibilities, and it left me wanting to do my teaching differently, to shake ...
Anne-Marie Smith
doaj +4 more sources