Results 131 to 140 of about 136,372 (305)

Miulness based Cognitive therapy versus Cognitive Behavioral therapy on predictors of relapse in recurent Depression

open access: yesروانشناسی بالینی و شخصیت, 2014
Introduction: The present study was carried out to examine the effectiveness of Mindfulness based Cognitive therapy versus Cognitive Behavioral therapy on predictors of relapse in recurrent Depression.
mahdiyeh melyani   +4 more
doaj  

Electrochemical Behavior of Flame‐Sprayed Sc‐Doped AlCoCrFeMo High‐Entropy Alloy Coatings in 3.5% Sodium Chloride Solution

open access: yesAdvanced Engineering Materials, EarlyView.
Scandium (Sc)‐doped AlCoCrFeMo HEA coatings are fabricated via flame spraying with 0.1, 0.3, and 0.5 wt% Sc additions. Among these, the HEA‐Sc0.3 coating exhibits the highest corrosion resistance, indicated by a more positive corrosion potential and lower current density.
Pankaj Kumar   +7 more
wiley   +1 more source

Depression and cancer: physiological and psychological markers

open access: yes, 2010
PhDAim: To investigate potential markers for depression and poor quality of life (QoL) in head and neck (HN) and colorectal (CR) cancer patients. Background: Comorbid depression is strongly related to decreased QoL in cancer patients and may increase ...
Archer, Josephine Astrid
core  

Inverse Identification of Energy‐Dependent Laser Absorptivity in NiTi Laser Powder‐Bed Fusion via Calibrated Melt Pool Simulation

open access: yesAdvanced Engineering Materials, EarlyView.
A combined experimental–computational framework identifies energy‐dependent laser absorptivity for NiTi in laser powder‐bed fusion, applicable to conduction and transition modes. Single‐track experiments and thermofluid smoothed particle hydrodynamics simulations are coupled through inverse analysis of melt pool geometry.
Mohamadreza Afrasiabi   +3 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Recurrent brief depression: 'nasty, brutish and short'

open access: yes, 1997
Overview of Recurrent Brief Depression including: Historical background, development of the concept of recurrent brief depression; The Zurich Study; Diagnostic criteria; results of further epidemiological studies; similarities and differences with major ...
Sinclair, Julia M.A., Baldwin, David S.
core  

Interpersonal psychotherapy and mirtazapine versus mirtazapine alone in treatment resistant depressed patients with sequential functional brain scans of dopamine D2 receptors with IBZM spect [PDF]

open access: yes, 2007
Twenty DSM-IV major depressed patients who had not responded to at least one previous trial of antidepressant therapy at an adequate dose and duration agreed to participate in this study. They were randomly assigned to receive either mirtazapine (30-45mg)
Robinson, Elizabeth
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Autoimmune polyglandular syndrome type 2 and recurrent depression. [PDF]

open access: yesAnn Med Surg (Lond), 2023
Elsayed M   +3 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Home - About - Disclaimer - Privacy