Results 231 to 240 of about 459,412 (339)
Advanced Functional Materials, EarlyView.This work demonstrates the successful integration of a phenanthroline‐based 2D COF with MnI catalytic sites into a catholyte‐free membrane‐electrode‐assembly cell for CO2 electroreduction. The crystalline COF actively suppresses Mn⁰–Mn⁰ dimerization, achieving a turnover frequency of 617 h⁻¹ at 2.8 V (full‐cell potential), and enabling stable operation.
Laura Spies +8 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing +9 more
wiley +1 more source
Advanced Functional Materials, EarlyView.The use of ferroelectric polarization to enhance photocatalytic and photoelectrocatalytic activity is an innovative, and increasingly studied route to improve the spatial separation of charge carriers and therefore enhance catalytic efficiency. These results demonstrate how the intrinsic properties of a ferroelectric film can extend charge carrier ...
Chloe Forrester +5 more
wiley +1 more source
Al1‐xScxN‐Based Ferroelectric Domain‐Wall Memristors
Advanced Functional Materials, EarlyView.(a) Conductive atomic force microscopy (CAFM) image of the initial state bidomain structure of the Al0.85Sc0.15N (a) showing an enhanced conductivity of the head‐to‐head domain boundary. (b) CAFM image of the same area after application of several −65 V, 1 s voltage pulses showing lower conductivity of the generated tail‐to‐tail domain walls.
Haidong Lu +11 more
wiley +1 more source
Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory
Advanced Functional Materials, EarlyView.Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong +22 more
wiley +1 more source